Semiconductor CVD Equipment Market Size & Share Analysis - Growth Trends and Forecast (2026 - 2031)

Global Semiconductor CVD Equipment Market Trends and Insights

Intensifying 2 nm And Below Logic-Node Race Drives Higher ALD And CVD Tool Counts

Gate-all-around architectures below the 2-nanometer threshold add 40-50% more deposition steps than FinFET predecessors, lifting tool intensity per wafer starts by roughly 1.8x. TSMC’s N2 process, in high-volume manufacturing since late 2025, relies on cyclic plasma-enhanced ALD for high-k dielectrics and selective tungsten CVD for contacts, whereas Samsung integrates backside power delivery that inserts repeat planarization-and-re-deposit loops. Intel’s 18A node, slated for the second half of 2026, combines RibbonFET and PowerVia features that demand hybrid ALD-CVD chambers able to toggle thermal and plasma modes under a single vacuum. A single leading-edge fab therefore purchases 80–100 process chambers, resulting in USD 2–3 billion in incremental deposition spend per site.^{[1]TSMC, “2025 Technology Symposium Materials,” tsmc.com}

Explosive SiC/GaN Power-Device Capex For EV And Renewables

Wolfspeed, Infineon, and onsemi each broke ground on 200-millimeter silicon carbide fabs that, together, exceeded USD 10 billion in 2025 capital plans. Metal-organic CVD reactors constitute roughly one-quarter of those budgets because SiC drift-layer growth rates remain throughput-limited. Gallium-nitride adoption in data-center power supplies has pushed compound-semiconductor foundries to 85% utilization, triggering long-term equipment orders for AIXTRON planetary reactors. With wide-bandgap wafer starts set to rise 18% annually through 2030, the semiconductor CVD equipment market will see demand tilt toward specialized metal-organic platforms.

3D-NAND Less than 400-Layer Roadmaps Need Ultra-High-AR Gap-Fill Systems

Samsung’s 400-layer V-NAND and SK Hynix’s 321-layer design both exceed 100:1 aspect ratios where conventional PECVD voids compromise cell endurance. Manufacturers are adopting hybrid ALD-CVD sequences that alternate thermal and plasma exposure to achieve bottom-up fills with 2% void density, albeit at the expense of throughput. Each 100-k-wafer-per-month NAND fab consequently requires 30-40 next-generation gap-fill chambers priced at USD 12-18 million apiece, lifting memory deposition outlays by 60% across the forecast window.

CHIPS-Style Incentives Spawning Less than 30 New Green-Field Fabs Worldwide

Direct grants and tax credits in the United States, Europe, Japan, and India unlocked 27 fabrication projects between 2024 and 2025 that collectively earmark USD 420 billion for construction and tooling. Deposition accounts for nearly 15% of typical fab capex, implying demand for roughly 2,500 chambers by 2030. While permitting delays have stretched U.S. ground-break schedules, committed subsidies continue to anchor equipment pipelines, shielding the semiconductor chemical vapor deposition (CVD) equipment market from cyclical softness in consumer-device demand.^{[2]U.S. Department of Commerce, “CHIPS Incentive Awards,” commerce.gov}

EUR 50 Million-Plus Tool Price And Long ROIC Deter Smaller Foundries

Atomic-layer-deposition clusters configured for gate-all-around logic list above EUR 50 million (USD 56.5 million) and carry annual service contracts worth an additional 8-12% of the initial spend. Mature-node specialists, therefore, extend the effective life of refurbished PECVD chambers to 12 years, slowing replacement velocity. Capital-intensity disparity concentrates 78% of global deposition purchases among the top-10 manufacturers, creating a two-tier customer landscape that tempers expansion at second-tier fabs.

U.S.–China Export Controls Limit Addressable Sales In Greater than or Equal to 15% Of Market

The U.S. Bureau of Industry and Security’s December 2024 rule extended licensing to any tool capable of sub-14 nanometer gate-all-around fabrication, eliminating 15-18% of the previous total addressable market overnight. Chinese fabs pivoted to domestic suppliers NAURA Technology and AMEC, yet chamber-to-chamber uniformity and MTBM remain below Western benchmarks, constraining international penetration. The semiconductor CVD equipment market therefore re-balances toward Taiwan, South Korea, and the United States, which have each accelerated on-shore capacity plans to mitigate geopolitical risk.^{[3]U.S. Bureau of Industry and Security, “Semiconductor Manufacturing Controls,” bis.doc.gov}

Segment Analysis

By Application: Foundries Lead, Power-Device Fabs Accelerate

Foundry operations generated 41.64% of 2025 revenue as TSMC and Samsung ramped 3 nanometer and 2 nanometer nodes, anchoring the semiconductor CVD equipment market. Power and analog fabs are projected to advance at a 6.04% CAGR, the highest among applications, as electric vehicles and renewable-energy converters require thick epitaxial layers formed by low-pressure CVD. Memory accounted for 19% but sees the steepest tool-intensity gains from 3D-NAND scaling. Integrated device manufacturers contributed 23%, balancing single-wafer clusters for logic with batch furnaces for cost-sensitive analog lines. LED and optoelectronics remain niche at 6% yet gain momentum from micro-LED and LiDAR adoption.

Foundries are expected to maintain roughly 40% share through 2031, but growth moderates because mature-node lines increasingly retrofit existing chambers rather than purchase new platforms. In contrast, power-device capacity is expanding aggressively in Germany, the United States, and Malaysia, lifting specialty MOCVD demand. Memory spending remains cyclical, hinging on HBM and NAND pricing. The semiconductor chemical vapor deposition equipment market size tied to LED production will fluctuate with augmented-reality display roadmaps.

Note: Segment shares of all individual segments available upon report purchase

By Equipment Configuration: Single-Wafer Leads, Batch Furnaces Surge

Single-wafer clusters accounted for 45.09% of 2025 installations, underpinning every leading-edge logic and memory roadmap. Batch vertical furnaces, however, are expected to grow at a 6.18% CAGR as 28-nanometer and 40-nanometer analog fabs trade process precision for 40-50% lower cost per wafer. Dual-chamber clusters accounted for 18% by blending throughput with flexibility, while planetary reactors accounted for 12%, largely in compound-semiconductor MOCVD. Legacy single-chamber and pilot tools filled the remainder.

Gate-all-around devices achieve within-wafer uniformity of less than or equal to 1%, cementing single-wafer relevance at the frontier. Still, the global wafer-start mix remains 72% mature nodes, allowing vertical furnaces to reclaim share where ±5% tolerance suffices. Dual-chamber designs are gaining popularity for hybrid ALD-CVD stacks, shaving 30% off cycle time. Planetary reactors stay competitive in LED epitaxy but face single-wafer encroachment for GaN power devices.

Note: Segment shares of all individual segments available upon report purchase

By Wafer Size: 300 mm Dominates, 450 mm Inches Forward

The semiconductor CVD equipment market size tied to 300 millimeter production stood at 69.34% in 2025, cemented by more than 140 active fabs. 200-millimeter tools accounted for 24% of capacity, as silicon-carbide and gallium-nitride capacity surged. The 450 millimeter class remains less than 1% but is projected to grow 5.81% annually once Japan and Europe launch pilot lines aimed at 30-40% die-cost reduction. Sub-150-millimeter tools remain at 6% for GaAs RF devices and legacy SOI.

TSMC, Samsung, and Intel collectively pledged USD 85 billion toward new 300 millimeter capacity for 2024-2026, but tool shipments will slow to a 5.1% CAGR as retrofit programs mature. The 450-millimeter revival is driven by AI processors that strain 300-millimeter reticle limits; prototype PECVD and ALD platforms are due by 2028. Meanwhile, 200 millimeter MOCVD reactors are enjoying a renaissance as automotive OEMs demand vertically integrated SiC supply.

By End-User Type: Pure-Play Foundries Lead, Fabless Institutes Accelerate

Pure-play foundries secured 52.61% of 2025 revenue, with TSMC alone near one-third of the global total. Integrated device manufacturers, at 28%, blend captive logic and analog lines. Memory companies delivered 14%, and fabless design houses plus research institutes contributed the remaining 5% yet are forecast to rise 6.66% annually as chiplet development centers proliferate.

Foundry capex will hover near 40 % share but slow in growth because mature-node lines optimize existing clusters. Fabless institutes are internalizing pilot capability to shorten time-to-market, purchasing small-lot ALD-CVD hybrids with sub-angstrom control. Integrated device manufacturers open their fabs to external customers, demanding versatile dual-chamber tools. Memory spending stays cyclical, peaking with every NAND layer migration, while universities rely on atmospheric-pressure CVD benches to test emerging materials.

Note: Segment shares of all individual segments available upon report purchase

Geography Analysis

Asia-Pacific retained 47.57% of 2025 revenue and is projected to deliver a 7.83% CAGR through 2031 as TSMC, Samsung, and SK Hynix add 1 million wafer starts per month of leading-edge and power capacity. Chinese mature-node demand persists despite export controls, with NAURA Technology and AMEC lifting their local share to 22%. Japan’s JPY 2 trillion subsidy pool secures both TSMC’s Kumamoto and Micron’s Hiroshima expansions. Southeast Asia continues to absorb back-end and power-device investments, including Infineon’s 200 millimeter SiC line in Malaysia.

North America generated 28% of 2025 revenue, buoyed by USD 52.7 billion in CHIPS subsidies that anchor Intel, Micron, and Texas Instruments expansions. However, a 5.2% forecast CAGR trails Asia-Pacific because permitting delays push several U.S. fabs into 2027-2028 completion windows and because many projects target mature-node analog production with lower tool intensity. Canada’s silicon-photonics ecosystem and Mexico’s emerging wafer-level packaging lines add niche but growing demand.

Europe captured 18% of 2025 revenue and will expand at 4.8% through 2031. Intel’s EUR 30 billion (USD 35.07 billion) Magdeburg fab, TSMC’s EUR 10 billion (USD 11.69 billion) Dresden joint venture, and Infineon’s EUR 5 billion (USD 5.84 billion) PowerFab drive near-term orders. Strict environmental mandates raise PECVD system costs by 15-20% as in-situ abatement becomes compulsory. The Middle East and Africa and South America collectively hold less than 7% but may unlock incremental demand should proposed fabs in Abu Dhabi or government-funded Brazilian lines proceed.