Static Random Access Memory (SRAM) Market Size and Share
Market Overview
| Study Period | 2019 - 2030 |
|---|---|
| Market Size (2025) | USD 1.71 Billion |
| Market Size (2030) | USD 2.25 Billion |
| Growth Rate (2025 - 2030) | 5.60% CAGR |
| Fastest Growing Market | Middle East and Africa |
| Largest Market | Asia Pacific |
| Market Concentration | Medium |
Major Players
*Disclaimer: Major Players sorted in no particular order Image © Mordor Intelligence. Reuse requires attribution under CC BY 4.0. |
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Static Random Access Memory (SRAM) Market Analysis by Mordor Intelligence
The global Static Random Access Memory market size stood at USD 1.71 billion in 2025 and is forecast to advance at a 5.60% CAGR to reach USD 2.25 billion by 2030. Growth reflected the transition toward AI-centric compute, 5G roll-outs, and real-time edge processing, all of which rely on SRAM’s ultra-low latency for cache hierarchies. Semiconductor vendors prioritized shrinking SRAM cells at 2 nm to support larger L2/L3 caches while keeping power budgets in check. Data-center modernization drove demand for high-speed buffers in switches and accelerators, whereas consumer device refresh cycles maintained a steady baseline. Supply-chain resilience became pivotal after the 2024 Taiwan earthquake disrupted foundry output, prompting geographic diversification initiatives. Meanwhile, emerging non-volatile memories such as MRAM intensified competitive pressure on conventional SRAM in battery-backed designs.[1]Everspin Technologies, “MRAM Replaces nvSRAM,” everspin.com
Key Report Takeaways
By function, synchronous SRAM held 58.4% Static Random Access Memory market share in 2024; asynchronous SRAM posted the fastest 6.4% CAGR to 2030.
By product type, pseudo-SRAM led with 54.4% revenue share in 2024, while non-volatile SRAM is projected to expand at an 8.7% CAGR.
By memory density, the 8–64 Mb tier accounted for 42.3% of the Static Random Access Memory market size in 2024; densities above 256 Mb are poised to grow at 7.5% CAGR.
By end user, consumer electronics captured 46.3% revenue in 2024; automotive and aerospace are advancing at a 9.1% CAGR.
By geography, Asia-Pacific commanded 61.4% share of the Static Random Access Memory market in 2024, whereas the Middle East and Africa are the fastest-growing regions at 7.5% CAGR.
Global Static Random Access Memory (SRAM) Market Trends and Insights
Drivers Impact Analysis
| Driver | (~) % Impact on CAGR Forecast | Geographic Relevance | Impact Timeline |
|---|---|---|---|
| Rising demand for faster cache memories | +1.2% | Global, concentrated in North America and Asia-Pacific | Medium term (2-4 years) |
| Data center and 5G network build-out | +1.0% | Global, with emphasis on Asia-Pacific and North America | Short term (≤ 2 years) |
| IoT and wearable device proliferation | +0.8% | Global, led by Asia-Pacific manufacturing hubs | Medium term (2-4 years) |
| 3D-integrated SRAM for chiplets | +0.6% | North America and Asia-Pacific advanced fabs | Long term (≥ 4 years) |
| Radiation-hardened SRAM for LEO satellites | +0.4% | Global, concentrated in North America and Europe | Long term (≥ 4 years) |
| In-memory AI accelerators adoption | +0.7% | Global, with North America and Asia-Pacific leadership | Medium term (2-4 years) |
| Source: Mordor Intelligence | |||
Rising demand for faster cache memories
Advanced CPUs and GPUs shipped in 2025 featured larger on-chip caches to cut inference latency, with Intel’s Xeon 6 showing a 1.4× performance lift tied to cache optimization. TSMC’s 2 nm platform delivered higher SRAM cell density than competing 18A nodes, giving hyperscale customers more L3 cache per watt. Marvell unveiled 2 nm custom SRAM that packs 6 Gb of low-power memory, reducing energy use by 66% versus prior nodes. Such innovations enabled AI accelerators to keep model parameters closer to compute units, sustaining throughput while containing DRAM traffic. Consequently, the Static Random Access Memory market benefited from recurring capacity upgrades across data-center and edge silicon.
Data-center and 5G network build-out
Cloud operators doubled rack densities to host AI servers, prompting wider use of SRAM-based packet buffers in top-of-rack switches. Microsoft tested 246–275 GHz wireless backplanes in server halls, where microsecond-scale buffering relied on high-speed SRAM. Cisco’s converged 5G transport promoted deterministic latency, necessitating deep SRAM queues in routers. Corning forecasts an 18× jump in fiber demand per AI rack, mirroring the scaling of switch buffers built on synchronous SRAM. This infrastructure wave reinforced near-term revenue visibility for the Static Random Access Memory market.
IoT and wearable device proliferation
Ultra-low-power edge chips powering health wearables adopted custom SRAM blocks that retained data at single-digit microwatts; Syntiant’s neural processors exemplified the trend. Edge2LoRa gateways embedded modest SRAM to preprocess sensor data, cutting backhaul bandwidth by 90%. Automotive MCUs such as Renesas R-Car integrate deterministic SRAM for over-the-air updates and ADAS workloads. Collectively, these deployments widened the customer base for asynchronous and pseudo-SRAM products tailored to energy constraints.
In-memory AI accelerators adoption
Research prototypes demonstrated photonic SRAM with embedded XOR logic executing at >10 GHz while consuming 13.2 fJ per bit, pointing to future compute-in-memory architectures. A 28 nm 36 Kb compute-in-memory SRAM reduced weight-update energy, paving the way for embedded AI inference engines. Everspin’s PERSYST positioned persistent memory for safety-critical AI workloads where data retention is required after power loss. These advances heightened interest in specialty SRAM that blends speed with programmability, further expanding the Static Random Access Memory market.
Restraints Impact Analysis
| Restraint | (~) % Impact on CAGR Forecast | Geographic Relevance | Impact Timeline |
|---|---|---|---|
| High cost per bit vs. DRAM/NAND | -0.9% | Global, particularly impacting cost-sensitive applications | Short term (≤ 2 years) |
| Escalating power at ≤5 nm nodes | -0.7% | Advanced fabs in Asia-Pacific and North America | Medium term (2-4 years) |
| Emerging NVM (MRAM/ReRAM) displacement | -0.5% | Global, with early adoption in automotive and industrial | Long term (≥ 4 years) |
| Yield loss from lithography variability | -0.4% | Advanced process nodes globally | Medium term (2-4 years) |
| Source: Mordor Intelligence | |||
High cost per bit vs. DRAM/NAND
SRAM remained several times more expensive per bit than commodity DRAM, pressuring designers to trim usage in mass-market gadgets. DDR4 module prices climbed roughly 50% in H1 2025, illustrating volatility across the memory stack. Samsung leveraged tightening supply to lift LPDDR4 pricing, but that tactic risked accelerating OEM interest in hybrid SRAM-DRAM architectures to curb bills of materials. Consequently, the Static Random Access Memory market faced pushback in entry-level consumer segments until density-versus-cost trade-offs improved.
Emerging NVM (MRAM/ReRAM) displacement
Single-nanometer CoFeB/MgO magnetic tunnel junctions achieved sub-10 ns switching and ten-year retention, enabling MRAM to replace nvSRAM in rugged systems. Everspin marketed MRAM as a plug-in substitute for battery-backed SRAM, offering non-volatility without external capacitors. Automotive FPGA suppliers such as Lattice shifted from flash to MRAM configuration memory, showcasing real adoption.[2]Jim Tavacoli, “From Flash to MRAM,” Lattice Semiconductor, latticesemi.com If production costs fall further, a portion of the Static Random Access Memory market could migrate toward persistent alternatives.
Segment Analysis
By Function: Performance hinges on synchronous architectures
Synchronous SRAM captured 58.4% Static Random Access Memory market share in 2024, underscoring its indispensability for deterministic cache operation in CPUs, GPUs, and network ASICs. Automotive MCUs used synchronous arrays to meet stringent real-time requirements for driver-assistance workloads. The segment will maintain leadership as advanced nodes extend frequency envelopes and reduce core voltages.
Asynchronous SRAM expanded at a 6.4% CAGR and increasingly served IoT wearables and edge gateways where power budgets override latency targets. Energy-efficient designs eliminated clock trees and simplified board layouts, a boon for battery-operated healthcare devices employing Syntiant’s neural coprocessors. This divergence emphasized the Static Random Access Memory market trend toward application-specific optimization rather than one-size-fits-all performance chasing.
Note: Segment shares of all individual segments available upon report purchase
By Product Type: Cost-optimized pseudo-SRAM prevails
Pseudo-SRAM held a 54.4% share in 2024 by embedding DRAM cells behind an SRAM-style interface, achieving higher density without refresh management at the system level. RAAAM Memory Technologies and NXP claimed 50% area and 10× power savings versus classic high-density SRAM, appealing to mass-market microcontrollers.
Non-volatile SRAM grew fastest at 8.7% CAGR as factories and vehicles demanded data integrity during brownouts. Industrial automation players selected nvSRAM modules to protect process variables, avoiding costly downtime. Although niche, this cohort enriched the Static Random Access Memory market landscape with value-added resilience features.
By Memory Density: Mid-range remains sweet spot
The 8–64 Mb tier accounted for 42.3% of the Static Random Access Memory market size in 2024, matching typical L2/L3 cache footprints across mainstream CPUs. Alliance Memory’s 32 Mb fast SRAM in FBGA packaging illustrated continuous refinement in this zone.
>256 Mb devices posted a robust 7.5% CAGR as AI accelerators sought larger on-chip caches to minimize DRAM fetches. Micron projected automobiles would soon carry 90 GB of total memory, hinting at rising high-density SRAM demand in zonal controllers. Density evolution, therefore, mirrored compute-intensive workload growth underpinning the Static Random Access Memory market.
By End User: Consumer volume vs. automotive velocity
Consumer electronics generated 46.3% of 2024 revenue thanks to the vast scale of smartphones, tablets, and PCs. Micron and Samsung integrated LPDDR5X and on-board SRAM in the Galaxy S24, elevating mobile AI responsiveness.
Automotive and aerospace segments recorded a 9.1% CAGR as software-defined vehicles required a deterministic cache for sensor fusion and over-the-air reconfiguration. NXP’s S32K5 MCU with embedded magnetic RAM writes 15× faster than flash, demonstrating the appetite for high-reliability memory.[3]NXP Semiconductors, “S32K5 MCU,” stocktitan.net Such momentum broadened the Static Random Access Memory market beyond traditional consumer refresh cycles.
Geography Analysis
Asia-Pacific retained 61.4% Static Random Access Memory market share in 2024, fueled by Taiwan’s foundry dominance, South Korea’s memory innovation, and China’s scale-up efforts. SK Hynix’s rise to 36% of global DRAM output highlighted the region’s technology depth. Yet the 2024 Taiwan quake exposed concentration risk, prompting contingency fabs in Japan and Singapore. Japan projected semiconductor equipment sales of JPY 5.51 trillion (USD 38.35 billion) in FY26, underscoring continued capacity build-out.
Middle East and Africa charted the fastest 7.5% CAGR, anchored by sovereign-fund spending to position the Gulf as a tri-continent data hub. Warehouse automation in the region was set for 17.5% annual growth to USD 1.6 billion by 2025, driving demand for reliable on-board caches. Africa’s energy projects earmarked USD 730 billion in new capex to 2030, requiring industrial control systems that lean on SRAM for deterministic response.
North America focused on AI datacenter roll-outs, while Europe doubled down on sovereignty through the EUR 43 billion Chips Act. STMicroelectronics secured EUR 5 billion (USD 5.4 billion) for a Silicon Carbide campus in Italy, widening regional competency in power electronics that also consume specialized SRAM. Talent shortages, however, threatened expansion, with ASML warning it might shift operations if immigration tightened. These contrasts highlight diverse regional levers shaping the Static Random Access Memory market.
Competitive Landscape
The market displayed moderate consolidation around integrated device manufacturers and foundry-aligned challengers. Samsung, SK Hynix, and Micron fortified positions by scaling HBM roadmaps; Samsung accelerated its Pyeongtaek wafer fab to seize HBM4 business. SK Hynix partnered with TSMC on advanced packaging to sustain bandwidth leadership.[4]SK hynix, “Partners with TSMC to Strengthen HBM Leadership,” skhynix.com
At the IP and specialty layer, GSI Technology and Cypress targeted low-latency networking gear, while newcomers such as Numem planned MRAM chiplets promising HBM-class throughput by 2025. Imec, TSMC, and Samsung-IBM each demonstrated CFET SRAM prototypes with 40% cell-area reduction, anticipating 3D stacked logic-memory hybrids.
Emergent niches included radiation-hardened 18T cells for LEO satellites that improved read stability while lowering standby power. Funding from the European Innovation Council enabled RAAAM to advance on-chip pseudo-SRAM for MCU markets, illustrating how regional policy catalyzed new entrants. Competitive advantage thus pivoted on packaging innovation, specialty process know-how, and intellectual-property breadth, all shaping future Static Random Access Memory market positioning.
Static Random Access Memory (SRAM) Industry Leaders
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Renesas Electronics Corporation
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STMicroelectronics N.V.
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Toshiba Corporation
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Cypress Semiconductor
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Integrated Silicon Solution, Inc. (ISSI)
- *Disclaimer: Major Players sorted in no particular order
Recent Industry Developments
- July 2025: Samsung fast-tracked Pyeongtaek wafer plant to secure HBM4 capacity.
- June 2025: Marvell introduced 2 nm custom SRAM delivering 6 Gb capacity at 66% lower power.
- June 2025: SK Hynix posted a KRW 9 trillion profit surge on HBM demand.
- May 2025: Samsung and SK Hynix advanced hybrid bonding for next-gen HBM.
Global Static Random Access Memory (SRAM) Market Report Scope
SRAM (static RAM) is random access memory (RAM) that retains data bits in its memory as long as power is being supplied. Unlike dynamic RAM (DRAM), which stores bits in cells consisting of a capacitor and a transistor, SRAM does not have to be periodically refreshed. Static RAM provides faster access to data and is more expensive than DRAM.
| Asynchronous SRAM |
| Synchronous SRAM |
| Pseudo SRAM (PSRAM) |
| Non-Volatile SRAM (nvSRAM) |
| Other Product Types |
| ≤8 Mb |
| 8 – 64 Mb |
| 64 – 256 Mb |
| >256 Mb |
| Consumer Electronics |
| Industrial |
| Communication Infrastructure |
| Automotive and Aerospace |
| Other End Users |
| North America | United States | |
| Canada | ||
| Mexico | ||
| South America | Brazil | |
| Argentina | ||
| Rest of South America | ||
| Europe | Germany | |
| United Kingdom | ||
| France | ||
| Italy | ||
| Russia | ||
| Rest of Europe | ||
| Asia-Pacific | China | |
| Japan | ||
| South Korea | ||
| India | ||
| Taiwan | ||
| Rest of Asia-Pacific | ||
| Middle East and Africa | Middle East | Turkey |
| Israel | ||
| GCC Countries | ||
| Rest of Middle East | ||
| Africa | South Africa | |
| Nigeria | ||
| Rest of Africa | ||
| By Function | Asynchronous SRAM | ||
| Synchronous SRAM | |||
| By Product Type | Pseudo SRAM (PSRAM) | ||
| Non-Volatile SRAM (nvSRAM) | |||
| Other Product Types | |||
| By Memory Density | ≤8 Mb | ||
| 8 – 64 Mb | |||
| 64 – 256 Mb | |||
| >256 Mb | |||
| By End User | Consumer Electronics | ||
| Industrial | |||
| Communication Infrastructure | |||
| Automotive and Aerospace | |||
| Other End Users | |||
| By Geography | North America | United States | |
| Canada | |||
| Mexico | |||
| South America | Brazil | ||
| Argentina | |||
| Rest of South America | |||
| Europe | Germany | ||
| United Kingdom | |||
| France | |||
| Italy | |||
| Russia | |||
| Rest of Europe | |||
| Asia-Pacific | China | ||
| Japan | |||
| South Korea | |||
| India | |||
| Taiwan | |||
| Rest of Asia-Pacific | |||
| Middle East and Africa | Middle East | Turkey | |
| Israel | |||
| GCC Countries | |||
| Rest of Middle East | |||
| Africa | South Africa | ||
| Nigeria | |||
| Rest of Africa | |||
Key Questions Answered in the Report
What is the current value of the Static Random Access Memory market?
The market reached USD 1.71 billion in 2025 and is forecast to climb to USD 2.25 billion by 2030.
Which region dominates the Static Random Access Memory market revenue?
Asia-Pacific accounted for 61.4% of global revenue in 2024, anchored by Taiwan’s and South Korea’s manufacturing ecosystems.
Which Static Random Access Memory market segment is growing fastest?
Automotive and aerospace applications are expanding at a 9.1% CAGR as vehicles adopt software-defined architectures requiring low-latency caches.
How is emerging MRAM technology impacting SRAM demand?
MRAM offers non-volatility and lower standby power, challenging SRAM in battery-backed and rugged systems, potentially diverting share over the long term.
What density class is most common in today’s SRAM chips?
The 8–64 Mb range captured 42.3% of 2024 sales because it aligns with mainstream processor cache sizes.
Why did synchronous SRAM outrun asynchronous types in revenue share?
Clock-synchronized designs provide deterministic timing essential for high-performance CPUs, GPUs, and networking ASICs, securing 58.4% market share in 2024.
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