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The Next Generation Memory Market is segmented by Technology (Volatile and Non-Volatile), Application (BFSI, Consumer Electronics, Government, Telecommunications, and Information Technology), and Geography.
2018 - 2026
Fastest Growing Market:
The global next generation memory market was valued at USD 2935.1 million in 2020 and expected to reach USD 12833.1 million by 2026 and grow at a CAGR of 29.7% over the forecast period (2021 - 2026). The emerging non-volatile memory technologies, such as MRAM, STT-RAM, FRAM, phase-change memory (PCM), and ReRAM combine the speed of SRAM, the density of DRAM, and the non-volatility of flash memory. Hence, these are the possible additions to the future memory technologies. Moreover, the adoption of next-generation infotainment systems and ADAS would be fusing the DRAM memory technologies that would have much higher performance and low power consumption capabilities.
Next generation memory can be defined as a common label applied to a major upgrade of hardware or a software product. The next generation memory market has grown over the last few years because of the increasing demand for faster, efficient, and cost-effective memory solutions. The emerging Big Data and artificial intelligence (AI) applications, including machine learning, drive innovations across many industries and this is accompanying new memory technologies in various end-users such as BFSI, Consumer Electronics, etc.
|Middle East & Africa|
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The next generation memory market is highly fragmented as the market is highly competitive and consists of several major players. The competitive rivalry in this industry is primarily dependent on the sustainable competitive advantage through innovation, levels of market penetration, and power of competitive strategy. Since the market is capital intensive, the barriers to exit are high as well. Some of the key players in the market are Intel Corporation, Toshiba Corporation, Fujitsu Ltd, etc. Some of the key recent developments in the market are -
Aug 2019 - Samsung announced its 6th generation V-NAND memory with 100 active layers using new circuit design technology. It features 10% lower latencies and consumes 15% lower amount of power when compared to Samsung's previous-generation V-NAND products. This V-NAND also features lower power consumption than its predecessors.
July 2019 - Fujitsu Semiconductor announced the release of the 8Mbit ReRAM MB85AS8MT, which is reportedly the world's largest density as a mass-produced This ReRAM product, suitable for wearable devices, was jointly developed with Panasonic Semiconductor Solutions Co. Ltd. The MB85AS8MT is an EEPROM-compatible non-volatile memory with SPI-interface that operates with a wide range of power supply voltages from 1.6V to 3.6V. One major feature of this memory is an extremely small average current for read operations of 0.15mA at an operating frequency of 5MHz. This enables minimal battery consumption when mounted in battery-operated applications with frequent data-read operations.
1.1 Study Deliverables
1.2 Study Assumptions
1.3 Scope of the Study
2. RESEARCH METHODOLOGY
3. EXECUTIVE SUMMARY
4. MARKET DYNAMICS
4.1 Market Overview
4.2 Introduction to Market Drivers and Restraints
4.3 Market Drivers
4.3.1 Demand for Universal Memory Devices
4.3.2 Increasing Demand for Enterprise Storage Applications
4.4 Market Restraints
4.4.1 Lack of Stability Under Extreme Environmental Conditions
4.5 Value Chain / Supply Chain Analysis
4.6 Industry Attractiveness - Porter's Five Force Analysis
4.6.1 Threat of New Entrants
4.6.2 Bargaining Power of Buyers/Consumers
4.6.3 Bargaining Power of Suppliers
4.6.4 Threat of Substitute Products
4.6.5 Intensity of Competitive Rivalry
5. MARKET SEGMENTATION
5.1 By Technology
126.96.36.199 Magneto-Resistive Random-Access Memory (MRAM)
188.8.131.52 Ferroelectric RAM (FRAM)
184.108.40.206 Resistive Random-Access Memory (ReRAM)
220.127.116.11 3D Xpoint
18.104.22.168 Nano RAM
22.214.171.124 Other Non-volatile Technologies (Phase change RAM, STT-RAM, and SRAM)
126.96.36.199 Hybrid Memory Cube (HMC)
188.8.131.52 High-bandwidth Memory (HBM)
5.2 By Application
5.2.2 Consumer Electronics
5.2.5 Information Technology
5.2.6 Other Applications
5.3.1 North America
5.3.4 Latin America
5.3.5 Middle East & Africa
6. COMPETITIVE LANDSCAPE
6.1 Company Profiles
6.1.1 Intel Corporation
6.1.2 Toshiba Corporation
6.1.3 Fujitsu Ltd
6.1.4 Honeywell International Inc.
6.1.5 Micron Technologies Inc.
6.1.6 IBM Corporation
6.1.7 Sony Corporation
6.1.8 Samsung Electronics Co. Ltd
6.1.9 Crossbar Inc.
6.1.10 Cypress Semiconductor Corporation
6.1.11 Avalanche Technologies Inc.
6.1.12 Adesto Technologies
6.1.13 Everspin Technologies Inc.
6.1.14 SK Hynix Inc.
6.1.15 Taiwan Semiconductor Manufacturing Company Limited (TSMC)
7. INVESTMENT ANALYSIS
8. MARKET OPPORTUNITIES AND FUTURE TRENDS
** Subject to Availability