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The Next-Generation Transistors Market is segmented by Type (High Electron Mobility Transistor (HEMT), Bipolar Junction Transistor (BJT), Field Effect Transistors (FET), Multiple Emitter Transistor (MET), and Dual Gate Metal Oxide Semiconductor Field Effective Transistor), End-User Industry (Aerospace & Defense, Industrial, Telecommunications, and Consumer Electronics), and Geography.
Fastest Growing Market:
Transistors have always played a central role in many electronic circuits, where they usually function either as a switch or an amplifier. With current silicon-based transistors topping up at around 14 nm, the semiconductor industry is currently on the search for new materials that can prolong Moore's law at smaller scales. The last two decades have experienced the scaling of silicon transistor dimensions that have powered the electronics revolution, with transistors reaching nanometre sizes. As CMOS continues to scale down beyond a certain point, reliability issues have scaled up. To exceed the limits of silicon, new channel materials with high carrier velocities are being developed to support the Next-Generation of Transistors. For instance, he finFET according to Intel is scalable to 14nm and Intel has already started working on solutions for 10nm and below fabrications using advanced technologies.
According to Moore's law, the number of transistors on a one-inch computer will double every year, while the costs halve. That period has now gone up to 18 months, and it's getting longer due to the topping-out of silicon. The computing devices of the future will need to be both more powerful and agile as the growing number of applications will require increased speed, reduced latency, and light detection. This has led the industry to invest itself in finding out next-generation materials for transistors with higher carrier velocities as compared to Silicon. For instance, with much higher electron mobility than silicon, group III-V semiconductor materials can be fit into smaller and faster transistors.
|High Electron Mobility Transistor (HEMT)|
|Bipolar Junction Transistor (BJT)|
|Field Effect Transistors (FET)|
|Multiple Emitter Transistor (MET)|
|Dual Gate Metal Oxide Semiconductor Field Effective Transistor|
|By End-User Industry|
|Aerospace & Defense|
|Middle East & Africa|
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The next-generation transistors market is a highly competitive market. The semiconductor industry itself is going through a phase of specialization. Historically, the industry has concentrated on producing computer chips that could perform several generalized functions. These chips were related to each other to some extent. But today the applications of the semiconductors are more nuanced and differentiated leading to the proliferation of a number of niche players with specialized expertise across various verticals. Moreover, in this industry, a lot of players do outsource their functionalities except a few major players like Intel who do design, fabrication, and manufacturing of semiconductor products. This makes the industry deeply connected to global supply chains and have made this industry both fiercely competitive as well as deeply collaborative.
The factors mentioned above make the next-generation transistors market a fragmented market with the presence of a large number of players. Some of the significant players are Intel Corporation, Infineon Technologies AG, STMicroelectronics N.V., Texas Instruments Incorporated, NXP Semiconductors N.V. Some of the recent developments in this industry are as follows:-
1.1 Study Deliverables
1.2 Study Assumptions
1.3 Scope of the Study
2. RESEARCH METHODOLOGY
3. EXECUTIVE SUMMARY
4. MARKET DYNAMICS
4.1 Market Overview
4.2 Introduction to Market Dynamics
4.3 Market Drivers
4.3.1 Technological Advancements Leading To Demand for Increasing Device Densities
4.3.2 Proliferation of Consumer Electronics and Increased Use of Electronics in the Industrial Sector will Drive the Demand
4.4 Market Restraints
4.4.1 Cost of Maintaining Moore's Law is Getting Higher with Low Returns
4.5 Industry Value Chain Analysis
4.6 Industry Attractiveness - Porter's Five Force Analysis
4.6.1 Threat of New Entrants
4.6.2 Bargaining Power of Buyers/Consumers
4.6.3 Bargaining Power of Suppliers
4.6.4 Threat of Substitute Products
4.6.5 Intensity of Competitive Rivalry
5. MARKET SEGMENTATION
5.1 By Type
5.1.1 High Electron Mobility Transistor (HEMT)
5.1.2 Bipolar Junction Transistor (BJT)
5.1.3 Field Effect Transistors (FET)
5.1.4 Multiple Emitter Transistor (MET)
5.1.5 Dual Gate Metal Oxide Semiconductor Field Effective Transistor
5.2 By End-User Industry
5.2.1 Aerospace & Defense
5.2.4 Consumer Electronics
5.3.1 North America
5.3.3 Asia Pacific
5.3.4 Latin America
5.3.5 Middle East & Africa
6. COMPETITIVE LANDSCAPE
6.1 Company Profiles
6.1.1 NXP Semiconductors N.V.
6.1.2 Infineon Technologies AG
6.1.3 STMicroelectronics N.V.
6.1.4 Fairchild Semiconductor International, Inc. (ON Semiconductor Corp.)
6.1.5 Texas Instruments Incorporated
6.1.6 Intel Corporation
6.1.7 GLOBALFOUNDRIES Inc.
6.1.8 Taiwan Semiconductor Manufacturing Company
6.1.9 Samsung Electronics Co., Ltd
6.1.10 Microchip Technology Inc.
7. INVESTMENT ANALYSIS
8. MARKET OPPORTUNITIES AND FUTURE TRENDS