China Semiconductor Device Market Size and Share
China Semiconductor Device Market Analysis by Mordor Intelligence
The China semiconductor device market size was valued at USD 217.55 billion in 2025 and is projected to reach USD 310.78 billion by 2030, reflecting a 7.39% CAGR. Over the past two years, the market has held its growth trajectory despite escalating export restrictions because domestic firms moved quickly to mature-node capacity expansions, poured capital into wide-bandgap materials, and secured strong provincial incentives. Semiconductor demand continued to climb as cloud providers scaled AI workloads, electric-vehicle makers ramped new energy platforms, and local governments accelerated 5G and smart-factory deployments. Supply-chain localization also reduced import exposure, while policy tools such as the latest USD 47.5 billion national fund kept fab projects on schedule, buffering the overall China semiconductor device market against external shocks.[1]Semiconductor Industry Association, “OMB-RFI-SIA-COMMENTS-3.17.25,” semiconductors.org
Key Report Takeaways
- By device type, integrated circuits held 69.5% of the China semiconductor device market share in 2024, while the same segment is advancing at an 8.1% CAGR through 2030.
- By fabrication node, the 45-28 nm band led with 26.2% revenue share in 2024; 7-5 nm nodes are forecast to expand at a 13.2% CAGR to 2030.
- By wafer size, 300 mm substrates accounted for 67.5% of the China semiconductor device market size in 2024, and wafers above 300 mm are projected to grow at an 11.1% CAGR from 2025-2030.
- By material, silicon captured 88.6% of revenue in 2024, while silicon-carbide is on track for a 20.3% CAGR over the forecast period.
- By end-use industry, consumer electronics led with 36.3% revenue share in 2024; automotive semiconductors are advancing at a 12.2% CAGR through 2030 as electric-vehicle output soars.
China Semiconductor Device Market Trends and Insights
Drivers Impact Analysis
Driver | (~) % Impact on CAGR Forecast | Geographic Relevance | Impact Timeline |
---|---|---|---|
Accelerated "Made-in-China 2025" IC Capacity Expansion Programs | 2.1% | National, with a concentration in eastern provinces including Shanghai, Beijing, and Guangdong | Medium term (2-4 years) |
AI-centric Edge-Computing Demand from Tier-1 Chinese Cloud Providers | 1.8% | National, with a focus on major data centre hubs in Beijing, Shanghai, Guangzhou, and Shenzhen | Short term (≤ 2 years) |
Automotive‐grade SiC/GaN Adoption in NEV Powertrains | 1.5% | National, with early gains in major EV manufacturing centres like Shanghai, Shenzhen, and Hefei | Medium term (2-4 years) |
National 5G Base-station Build-out Driving RF-Front-End IC Uptake | 1.2% | National, with initial deployment in tier-1 and tier-2 cities | Short term (≤ 2 years) |
Industrial Upgrade to "Industry 4.0" Smart-Factories | 0.9% | National, with a concentration in manufacturing hubs of eastern and southern China | Medium term (2-4 years) |
Source: Mordor Intelligence
Accelerated “Made-in-China 2025” IC Capacity Expansion Programs
Government-backed mega funds disbursed since 2024 have prompted dozens of new 300 mm fabs in Shanghai, Beijing, and Guangdong. Capacity at SMIC’s Shanghai campus doubled between 2020 and 2024, while provincial tax holidays pulled more second-tier foundries to Jiangsu and Anhui. Capital intensity remained high, yet attractive utility subsidies and streamlined land approvals shortened construction cycles, so incremental mature-node output reached the market during the recent chip shortage window. By leveraging equipment that is outside the current export-control scope, domestic operators minimized schedule risk and secured long-term offtake deals from local OEMs.
AI-Centric Edge-Computing Demand from Tier-1 Chinese Cloud Providers
Baidu, Alibaba, and Tencent broadened deployment of in-house AI accelerators to power vision analytics, autonomous retail, and traffic-management nodes. Kunlun and Hanguang chipsets delivered triple-digit TOPS performance within a 40-watt envelope, enabling servers in micro-edge sites to process workloads previously tied to regional data centres. Rising inference traffic drove sustained orders for logic, HBM, and advanced network-on-chip devices, feeding the China semiconductor device market even as traditional smartphone demand softened.
Automotive-Grade SiC/GaN Adoption in NEV Powertrains
Wide-bandgap devices moved from pilot to volume production as battery-electric platforms gained share. StarPower, BYD, and CRRC scaled domestic SiC module lines supporting on-board chargers and traction inverters. Efficiency gains of up to 20% over silicon IGBTs translated directly into range improvements, allowing automakers to advertise smaller battery packs without sacrificing mileage. Provinces running NEV cluster programs linked purchase subsidies to local component sourcing, reinforcing demand visibility for power-device suppliers.
National 5G Base-Station Build-Out Driving RF Front-End IC Uptake
Telecom operators added tens of thousands of 5G macro sites and small cells, each populated with massive-MIMO arrays that embed multiple power amplifiers, switches, and antenna tuners. Domestic module houses, strengthened by joint R&D with base-station OEMs, captured incremental sockets after North American vendors withdrew. The increased semiconductor content per site, plus the densification of urban networks, multiplied unit demand and supported volume ramp-ups for local GaN RF foundries.
Restraints Impact Analysis
Restraint | (~) % Impact on CAGR Forecast | Geographic Relevance | Impact Timeline |
---|---|---|---|
US Export-control Entity-List Restrictions on EUV and EDA Tools | -1.3% | National, with a severe impact on advanced node production | Long term (≥ 4 years) |
Talent Drain to Overseas Design Houses | -0.8% | National, particularly affecting innovation hubs in Shanghai, Beijing, and Shenzhen | Medium term (2-4 years) |
Electricity-Intensive Fabs Facing Provincial Carbon-Quota Caps | -0.6% | Regional, with the highest impact in coal-dependent northern provinces | Medium term (2-4 years) |
Persistent Price Volatility of 300 mm Prime Wafers | -0.4% | Global, with supply chain implications for all Chinese fabs | Short term (≤ 2 years) |
Source: Mordor Intelligence
US Export-Control Entity-List Restrictions on EUV and EDA Tools
The embargo on ASML EUV scanners and leading US EDA suites capped progress below 7 nm. Domestic toolmakers unveiled a laser-induced plasma exposure system slated for trial in Q3 2025, yet throughput still lagged overseas benchmarks. Design teams working at 14 nm and above re-architected packages and leveraged chiplet approaches to bypass lithography limits, but performance gaps persisted in high-end server and mobile processors. The constraint prolonged reliance on mature architectures, creating a ceiling for bleeding-edge segments of the China semiconductor device market.
Talent Drain to Overseas Design Houses
Aggressive global recruitment campaigns raised attrition among mid-career engineers in Shanghai and Shenzhen. The pull of salary premiums and advanced-node exposure in the United States and Taiwan siphoned away verification, DFT, and RF specialists. Local firms responded with equity incentives and accelerated leadership tracks, yet specialized EDA know-how remained scarce, delaying tape-outs on complex SoCs. The gap reinforced dependence on foreign IP and slowed vertical integration plans in GPU and AI ASIC lines.
Segment Analysis
By Device Type: Integrated Circuits Sustain Dominance Amid AI Tailwinds
Integrated circuits accounted for 69.5% of the China semiconductor device market share in 2024 and recorded the fastest 8.1% CAGR outlook to 2030, underscoring their central role across smartphones, servers, and industrial controllers. Logic devices in particular benefited from hyperscale AI training clusters that demanded higher core counts and memory bandwidth. Meanwhile, discrete power devices supplied electric-vehicle inverters and renewable-energy inverters, locking in multiyear contracts with auto OEMs and utilities. Optoelectronics enjoyed new design wins in LiDAR and datacom transceivers, while sensor volumes climbed on factory digitalization mandates.
Robust logic demand encouraged domestic foundries to boost tape-out slots, shortening lead times that had previously pushed design wins offshore. At the same time, discrete MOSFET and IGBT makers secured poly-silicon allocations from state-owned producers, further localizing supply risk. The China semiconductor device market size for integrated circuits is projected to rise in line with rising AI inference workloads and edge analytics nodes through 2030, reinforcing its share leadership. In contrast, sensors and optoelectronic devices are positioned for steady mid-single-digit gains as smart-city rollouts widen camera, traffic, and environmental monitoring networks.
Note: Segment shares of all individual segments available upon report purchase
By Fabrication Node: Mature Nodes Anchor Volume; Advanced Processes Accelerate
The 45-28 nm bracket held 26.2% of 2024 revenue, reflecting the sweet spot for automotive MCUs, 5G baseband chips, and emerging AI edge accelerators. Cost and yield advantages kept demand stable even as designers evaluated newer nodes. However, 7-5 nm production grew from a low base, logging a 13.2% forward CAGR as SMIC’s deep ultraviolet lines demonstrated viable yields for performance-focused SoCs. The China semiconductor device market size in the advanced-node category remains constrained by tooling limits, yet localized ecosystem support for IP blocks and packaging is mitigating adoption hurdles.
Nodes above 65 nm sustained legacy MCU, analog, and power-management workloads and benefited from the relocation of overseas lines retiring 200 mm equipment. Transitional 22-16 nm and 14-10 nm nodes offered incremental performance gains at manageable capex, attracting networking and storage ASIC projects. Sub-3 nm R&D efforts persisted in university and state labs but will rely on domestic EUV breakthroughs slated beyond 2026. The overall node mix highlights a two-tier roadmap where mature processes deliver mass volume while cutting-edge development pursues strategic self-reliance.
By Wafer Size: 300 mm Migration Boosts Cost Competitiveness
The 300 mm category accounted for 67.5% of the China semiconductor device market share in 2024, underscoring its status as the production workhorse for logic, memory, and power devices.[2]WaferPro, “200 mm Wafer vs 300 mm Wafer,” waferpro.com Moving to the larger substrate more than doubled usable die area relative to 200 mm wafers and enabled per-die cost reductions of roughly 40% at SMIC’s Shanghai fab, solidifying the node’s margin advantage. These efficiencies encouraged domestic foundries to lock in multi-year take-or-pay agreements with consumer-electronics and cloud-service customers, helping stabilize fab utilization at mature nodes. The resulting scale effects deepened local tooling ecosystems and kept the China semiconductor device market on its forecast trajectory despite external supply shocks.
200 mm lines remained strategically important for specialty analog, sensor, and MEMS devices, yet persistent global shortages kept their capacity fully booked and extended lead times for automotive customers. Pilot projects exploring substrates above 300 mm—including 450 mm initiatives at national research institutes—are projected to grow at an 11.1% CAGR between 2025-2030, a rate that exceeds the broader China semiconductor device market size over the same horizon. Mass adoption of these larger wafers will depend on synchronized equipment roadmaps and the capital intensity tolerable to foundries, but early tooling trials suggest potential yield and throughput gains sizable enough to justify phased investments. Together, the mixed wafer-size strategy provides flexibility to match device requirements with cost structures while cushioning the supply chain against future volatility.
By Semiconductor Material: Silicon Remains Bedrock; Wide-Bandgap Devices Surge
Silicon preserved an 88.6% revenue share in 2024 thanks to its well-established suppliers, toolsets, and design libraries. Capital deepening at mature nodes further extended silicon’s relevance for consumer, industrial, and RF products. Nonetheless, silicon-carbide posted the fastest 20.3% CAGR trajectory as EV makers prioritized higher voltage platforms and fast-charging networks. Domestic epi-wafer providers improved defect densities and secured tier-one auto qualifications, unlocking long-term sourcing deals.
Gallium-nitride moved beyond handset chargers into power conversion and RF, propelled by 5G base-station upgrades and satellite ground terminals. State directives to tighten export controls on raw gallium and germanium underscored strategic leverage in the upstream supply chain. Meanwhile, niche materials such as silicon-germanium and indium-phosphide served optical interconnects and high-frequency radar, giving specialty foundries opportunities to differentiate. This multi-material landscape broadens the resilience of the China semiconductor device market against single-technology shocks.

Note: Segment shares of all individual segments available upon report purchase
By End-Use Industry: Consumer Electronics Leads; Automotive Growth Accelerates
Consumer electronics commanded 36.3% of 2024 demand, sustained by smartphone refreshes, smart-TV upgrades, and wearables. OEMs optimized their bill-of-materials with more domestic components in response to import tariffs, reinforcing local semiconductor pull-through. Yet the automotive vertical is forecast for a 12.2% CAGR through 2030 as electrification and ADAS adoption multiply semiconductor content per vehicle. NEV makers integrated traction inverters, battery-management ICs, and radar SoCs, creating cross-cycle demand visibility for fab operators.
Industrial automation and energy grids also expanded chip usage through Industry 4.0 retrofits and photovoltaic inverter rollouts. Communication infrastructure demand stayed elevated thanks to continued 5G densification and early 6G testbeds, while data-centre upgrades to AI clusters spurred high-bandwidth memory and accelerator ASP gains. Healthcare wearables gained momentum from aging demographics and remote-monitoring policies, whereas aerospace and defense remained a smaller but strategic outlet for secure supply programs. Together, these segments diversify the revenue base and help smooth cyclical swings in the China semiconductor device market.
Geography Analysis
Regional specialization defined China’s semiconductor map. Eastern coastal provinces—Shanghai, Jiangsu, and Zhejiang—hosted most 300 mm fabs and IP design centres thanks to deep talent pools and logistics proximity to OEM hubs. In Shanghai’s Zhangjiang Park, cluster synergy between SMIC, Hua Hong, and dozens of EDA start-ups fostered quick time-to-market for new tape-outs, anchoring the city’s leadership position.[3]Shanghai Municipal Government, “Zhangjiang Hi-Tech Park Enhances Integrated-Circuit Ecosystem,” shanghai.gov.cn State funds combined with municipal tax holidays enabled fabs to integrate advanced packaging lines, attracting OSAT partners and shortening domestic supply loops.
Beijing–Tianjin–Hebei formed a complementary axis emphasizing R&D and pilot fabrication. Institutes under the Chinese Academy of Sciences partnered with foundries on chiplet interposers and photonic-IC platforms. Carbon-quota caps, however, forced fabs in the region to source renewable electricity certificates, slightly elevating opex. Moving south, Guangdong’s Shenzhen and Dongguan anchored assembly, test, and consumer-electronics manufacturing. A 2024 municipal fund earmarked for semiconductor tooling localized more backend capacity and mitigated cross-border delays from Hong Kong checkpoints.
Western and central provinces such as Chongqing, Chengdu, and Xi’an offered lower power tariffs and land grants to lure second-phase mature-node lines. These inland regions attracted supply-chain suppliers for chemicals and specialty gases, broadening national redundancy. Wuhan’s memory cluster pushed DRAM and 3D NAND projects forward with preferential credit lines, though export-control licensing for deposition tools remained a gating factor. Altogether, geographic diversification insulated the China semiconductor device market from localized disruptions and distributed industrial benefits beyond coastal megacities.
Competitive Landscape
The China semiconductor device market featured parallel competitive tracks. In the first, domestic champions expanded mature-node share by combining state incentives with aggressive capacity ramps. SMIC, Hua Hong, and Nexchip leveraged local tool vendors for 28-65 nm equipment, carving out incremental business from previously imported dies. Vertical players such as BYD converted in-house demand into stable wafer starts, reinforcing internal economies of scale.
The second track involved selective collaborations between global majors and local ecosystems. TSMC’s Nanjing fab delivered 28 nm services aimed at Chinese handset and IoT customers while keeping its most advanced 3 nm technology in Taiwan. Memory entrant YMTC shipped high-layer 3D NAND, and DRAM newcomer Changxin Memory pushed DDR5 into consumer modules, narrowing the capability gap with international leaders. Tool suppliers from Japan and Europe continued to sell deposition and etch gear that sits outside current embargo scopes, preserving hybrid value chains.[4]TSMC, “TSMC Fabs,” tsmc.com
Competitive dynamics intensified after the 2024 US export-control update, which spurred indigenous EDA efforts and prompted foundries to adopt advanced packaging to offset lithography limits. Turnkey chiplet services and wafer-level system-in-package offerings emerged as differentiators. Automotive and industrial sectors offered white-space potential for local SiC and GaN firms that faced fewer entrenched foreign incumbents. The divergent strategies created a market where mature-node competition is crowded, yet cutting-edge niches remain high-stakes and capital-intensive.
China Semiconductor Device Industry Leaders
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Semiconductor Manufacturing International Corp (SMIC)
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Taiwan Semiconductor Manufacturing Co (TSMC)
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Hua Hong Group
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Samsung Electronics Co Ltd
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Yangtze Memory Technologies Co (YMTC)
- *Disclaimer: Major Players sorted in no particular order

Recent Industry Developments
- March 2025: SMIC reported 2024 revenue of USD 8 billion, up 27%, despite profit compression linked to sanctions.
- March 2025: Huawei and SMIC disclosed a domestic EUV prototype using laser-induced plasma, targeting trial runs in Q3 2025.
- February 2025: ROHM introduced 650 V GaN HEMTs in TOLL packages, outsourcing assembly to Weihai-based ATX Semiconductor.
- February 2025: China Semiconductor Industry Association projected domestic equipment self-sufficiency to reach 50% by 2025.
China Semiconductor Device Market Report Scope
A semiconductor device is an electronic component that relies on the electronic properties of semiconductor material for its function. Its conductivity lies between conductors and insulators. Semiconductor devices have replaced vacuum tubes in most applications. They conduct electric current in the solid state rather than as free electrons across a vacuum or as free electrons and ions through an ionized gas.
The China semiconductor device market is segmented by device type (discrete semiconductors, optoelectronics, sensors, and integrated circuits [analog, logic, memory, and micro [microprocessors, microcontrollers, and digital signal processors]]) and by end-user vertical (automotive, communication [wired and wireless], consumer electronics, industrial, computing/data storage, and other end-user verticals). The report offers market forecasts and size in value (USD) for all the above segments.
By Device Type | Discrete Semiconductors | |||
Optoelectronics | ||||
Sensors | ||||
Integrated Circuits | Analog | |||
Logic | ||||
Memory | ||||
Micro | Microprocessors (MPU) | |||
Microcontrollers (MCU) | ||||
Digital Signal Processors | ||||
By Fabrication Node | ≥65 nm | |||
45–28 nm | ||||
22–16 nm | ||||
14–10 nm | ||||
7–5 nm | ||||
<3 nm | ||||
By Wafer Size | 200 mm | |||
300 mm | ||||
>300 mm (450 mm and FPD) | ||||
By Semiconductor Material | Silicon | |||
Silicon-Carbide (SiC) | ||||
Gallium-Nitride (GaN) | ||||
Others (SiGe, GaAs, InP) | ||||
By End-Use Industry | Automotive | |||
Communication (Wired and Wireless) | ||||
Consumer Electronics | ||||
Industrial Automation and Energy | ||||
Computing / Data Center | ||||
Aerospace and Defense | ||||
Healthcare and Wearables | ||||
Other End-Use Industries |
Discrete Semiconductors | |||
Optoelectronics | |||
Sensors | |||
Integrated Circuits | Analog | ||
Logic | |||
Memory | |||
Micro | Microprocessors (MPU) | ||
Microcontrollers (MCU) | |||
Digital Signal Processors |
≥65 nm |
45–28 nm |
22–16 nm |
14–10 nm |
7–5 nm |
<3 nm |
200 mm |
300 mm |
>300 mm (450 mm and FPD) |
Silicon |
Silicon-Carbide (SiC) |
Gallium-Nitride (GaN) |
Others (SiGe, GaAs, InP) |
Automotive |
Communication (Wired and Wireless) |
Consumer Electronics |
Industrial Automation and Energy |
Computing / Data Center |
Aerospace and Defense |
Healthcare and Wearables |
Other End-Use Industries |
Key Questions Answered in the Report
What is the current value of the China semiconductor device market?
The market generated USD 217.55 billion in 2025 and is on track for USD 310.78 billion by 2030.
Which device segment leads the market today?
Integrated circuits dominated with 69.5% revenue share in 2024 and are forecast for the fastest growth to 2030.
Why are wide-bandgap materials growing so quickly?
Silicon-carbide and gallium-nitride devices cut power losses and handle higher temperatures, making them ideal for electric-vehicle inverters and 5G base stations, which are expanding rapidly across China.
How have export controls affected domestic chipmakers?
Controls restricted access to EUV scanners and top-tier EDA tools, slowing sub-7 nm progress, yet firms shifted capital to mature-node expansions and advanced packaging to maintain growth.
What growth rate is expected for automotive semiconductors?
Semiconductor demand in China’s automotive sector is projected to rise at a 12.2% CAGR from 2025-2030 as electric-vehicle production scales nationally.