China Semiconductor Device Market Size & Share Analysis - Growth Trends & Forecasts (2025 - 2030)

China Semiconductor Device Market is Segmented by Device Type (Discrete Semiconductors, Optoelectronics, Sensors, Integrated Circuits), Fabrication Node (≥65 Nm, 45–28 Nm, 22–16 Nm, 14–10 Nm, 7–5 Nm, and <3 Nm), Wafer Size (200 Mm, 300 Mm, and >300 Mm (450 Mm and FPD)), Semiconductor Material (Silicon, Silicon-Carbide, Gallium-Nitride, and Others), End-Use Industry (Automotive, Communication, Consumer Electronics, and More).

China Semiconductor Device Market Size and Share

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China Semiconductor Device Market Analysis by Mordor Intelligence

The China semiconductor device market size was valued at USD 217.55 billion in 2025 and is projected to reach USD 310.78 billion by 2030, reflecting a 7.39% CAGR. Over the past two years, the market has held its growth trajectory despite escalating export restrictions because domestic firms moved quickly to mature-node capacity expansions, poured capital into wide-bandgap materials, and secured strong provincial incentives. Semiconductor demand continued to climb as cloud providers scaled AI workloads, electric-vehicle makers ramped new energy platforms, and local governments accelerated 5G and smart-factory deployments. Supply-chain localization also reduced import exposure, while policy tools such as the latest USD 47.5 billion national fund kept fab projects on schedule, buffering the overall China semiconductor device market against external shocks.[1]Semiconductor Industry Association, “OMB-RFI-SIA-COMMENTS-3.17.25,” semiconductors.org 

Key Report Takeaways

  • By device type, integrated circuits held 69.5% of the China semiconductor device market share in 2024, while the same segment is advancing at an 8.1% CAGR through 2030. 
  • By fabrication node, the 45-28 nm band led with 26.2% revenue share in 2024; 7-5 nm nodes are forecast to expand at a 13.2% CAGR to 2030. 
  • By wafer size, 300 mm substrates accounted for 67.5% of the China semiconductor device market size in 2024, and wafers above 300 mm are projected to grow at an 11.1% CAGR from 2025-2030. 
  • By material, silicon captured 88.6% of revenue in 2024, while silicon-carbide is on track for a 20.3% CAGR over the forecast period. 
  • By end-use industry, consumer electronics led with 36.3% revenue share in 2024; automotive semiconductors are advancing at a 12.2% CAGR through 2030 as electric-vehicle output soars.

Segment Analysis

By Device Type: Integrated Circuits Sustain Dominance Amid AI Tailwinds

Integrated circuits accounted for 69.5% of the China semiconductor device market share in 2024 and recorded the fastest 8.1% CAGR outlook to 2030, underscoring their central role across smartphones, servers, and industrial controllers. Logic devices in particular benefited from hyperscale AI training clusters that demanded higher core counts and memory bandwidth. Meanwhile, discrete power devices supplied electric-vehicle inverters and renewable-energy inverters, locking in multiyear contracts with auto OEMs and utilities. Optoelectronics enjoyed new design wins in LiDAR and datacom transceivers, while sensor volumes climbed on factory digitalization mandates. 

Robust logic demand encouraged domestic foundries to boost tape-out slots, shortening lead times that had previously pushed design wins offshore. At the same time, discrete MOSFET and IGBT makers secured poly-silicon allocations from state-owned producers, further localizing supply risk. The China semiconductor device market size for integrated circuits is projected to rise in line with rising AI inference workloads and edge analytics nodes through 2030, reinforcing its share leadership. In contrast, sensors and optoelectronic devices are positioned for steady mid-single-digit gains as smart-city rollouts widen camera, traffic, and environmental monitoring networks.

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Note: Segment shares of all individual segments available upon report purchase

By Fabrication Node: Mature Nodes Anchor Volume; Advanced Processes Accelerate

The 45-28 nm bracket held 26.2% of 2024 revenue, reflecting the sweet spot for automotive MCUs, 5G baseband chips, and emerging AI edge accelerators. Cost and yield advantages kept demand stable even as designers evaluated newer nodes. However, 7-5 nm production grew from a low base, logging a 13.2% forward CAGR as SMIC’s deep ultraviolet lines demonstrated viable yields for performance-focused SoCs. The China semiconductor device market size in the advanced-node category remains constrained by tooling limits, yet localized ecosystem support for IP blocks and packaging is mitigating adoption hurdles. 

Nodes above 65 nm sustained legacy MCU, analog, and power-management workloads and benefited from the relocation of overseas lines retiring 200 mm equipment. Transitional 22-16 nm and 14-10 nm nodes offered incremental performance gains at manageable capex, attracting networking and storage ASIC projects. Sub-3 nm R&D efforts persisted in university and state labs but will rely on domestic EUV breakthroughs slated beyond 2026. The overall node mix highlights a two-tier roadmap where mature processes deliver mass volume while cutting-edge development pursues strategic self-reliance. 

By Wafer Size: 300 mm Migration Boosts Cost Competitiveness

The 300 mm category accounted for 67.5% of the China semiconductor device market share in 2024, underscoring its status as the production workhorse for logic, memory, and power devices.[2]WaferPro, “200 mm Wafer vs 300 mm Wafer,” waferpro.com Moving to the larger substrate more than doubled usable die area relative to 200 mm wafers and enabled per-die cost reductions of roughly 40% at SMIC’s Shanghai fab, solidifying the node’s margin advantage. These efficiencies encouraged domestic foundries to lock in multi-year take-or-pay agreements with consumer-electronics and cloud-service customers, helping stabilize fab utilization at mature nodes. The resulting scale effects deepened local tooling ecosystems and kept the China semiconductor device market on its forecast trajectory despite external supply shocks.

200 mm lines remained strategically important for specialty analog, sensor, and MEMS devices, yet persistent global shortages kept their capacity fully booked and extended lead times for automotive customers. Pilot projects exploring substrates above 300 mm—including 450 mm initiatives at national research institutes—are projected to grow at an 11.1% CAGR between 2025-2030, a rate that exceeds the broader China semiconductor device market size over the same horizon. Mass adoption of these larger wafers will depend on synchronized equipment roadmaps and the capital intensity tolerable to foundries, but early tooling trials suggest potential yield and throughput gains sizable enough to justify phased investments. Together, the mixed wafer-size strategy provides flexibility to match device requirements with cost structures while cushioning the supply chain against future volatility.

By Semiconductor Material: Silicon Remains Bedrock; Wide-Bandgap Devices Surge

Silicon preserved an 88.6% revenue share in 2024 thanks to its well-established suppliers, toolsets, and design libraries. Capital deepening at mature nodes further extended silicon’s relevance for consumer, industrial, and RF products. Nonetheless, silicon-carbide posted the fastest 20.3% CAGR trajectory as EV makers prioritized higher voltage platforms and fast-charging networks. Domestic epi-wafer providers improved defect densities and secured tier-one auto qualifications, unlocking long-term sourcing deals. 

Gallium-nitride moved beyond handset chargers into power conversion and RF, propelled by 5G base-station upgrades and satellite ground terminals. State directives to tighten export controls on raw gallium and germanium underscored strategic leverage in the upstream supply chain. Meanwhile, niche materials such as silicon-germanium and indium-phosphide served optical interconnects and high-frequency radar, giving specialty foundries opportunities to differentiate. This multi-material landscape broadens the resilience of the China semiconductor device market against single-technology shocks. 

China Semiconductor Device Market
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Note: Segment shares of all individual segments available upon report purchase

By End-Use Industry: Consumer Electronics Leads; Automotive Growth Accelerates

Consumer electronics commanded 36.3% of 2024 demand, sustained by smartphone refreshes, smart-TV upgrades, and wearables. OEMs optimized their bill-of-materials with more domestic components in response to import tariffs, reinforcing local semiconductor pull-through. Yet the automotive vertical is forecast for a 12.2% CAGR through 2030 as electrification and ADAS adoption multiply semiconductor content per vehicle. NEV makers integrated traction inverters, battery-management ICs, and radar SoCs, creating cross-cycle demand visibility for fab operators. 

Industrial automation and energy grids also expanded chip usage through Industry 4.0 retrofits and photovoltaic inverter rollouts. Communication infrastructure demand stayed elevated thanks to continued 5G densification and early 6G testbeds, while data-centre upgrades to AI clusters spurred high-bandwidth memory and accelerator ASP gains. Healthcare wearables gained momentum from aging demographics and remote-monitoring policies, whereas aerospace and defense remained a smaller but strategic outlet for secure supply programs. Together, these segments diversify the revenue base and help smooth cyclical swings in the China semiconductor device market. 

Geography Analysis

Regional specialization defined China’s semiconductor map. Eastern coastal provinces—Shanghai, Jiangsu, and Zhejiang—hosted most 300 mm fabs and IP design centres thanks to deep talent pools and logistics proximity to OEM hubs. In Shanghai’s Zhangjiang Park, cluster synergy between SMIC, Hua Hong, and dozens of EDA start-ups fostered quick time-to-market for new tape-outs, anchoring the city’s leadership position.[3]Shanghai Municipal Government, “Zhangjiang Hi-Tech Park Enhances Integrated-Circuit Ecosystem,” shanghai.gov.cn State funds combined with municipal tax holidays enabled fabs to integrate advanced packaging lines, attracting OSAT partners and shortening domestic supply loops. 

Beijing–Tianjin–Hebei formed a complementary axis emphasizing R&D and pilot fabrication. Institutes under the Chinese Academy of Sciences partnered with foundries on chiplet interposers and photonic-IC platforms. Carbon-quota caps, however, forced fabs in the region to source renewable electricity certificates, slightly elevating opex. Moving south, Guangdong’s Shenzhen and Dongguan anchored assembly, test, and consumer-electronics manufacturing. A 2024 municipal fund earmarked for semiconductor tooling localized more backend capacity and mitigated cross-border delays from Hong Kong checkpoints. 

Western and central provinces such as Chongqing, Chengdu, and Xi’an offered lower power tariffs and land grants to lure second-phase mature-node lines. These inland regions attracted supply-chain suppliers for chemicals and specialty gases, broadening national redundancy. Wuhan’s memory cluster pushed DRAM and 3D NAND projects forward with preferential credit lines, though export-control licensing for deposition tools remained a gating factor. Altogether, geographic diversification insulated the China semiconductor device market from localized disruptions and distributed industrial benefits beyond coastal megacities. 

Competitive Landscape

The China semiconductor device market featured parallel competitive tracks. In the first, domestic champions expanded mature-node share by combining state incentives with aggressive capacity ramps. SMIC, Hua Hong, and Nexchip leveraged local tool vendors for 28-65 nm equipment, carving out incremental business from previously imported dies. Vertical players such as BYD converted in-house demand into stable wafer starts, reinforcing internal economies of scale. 

The second track involved selective collaborations between global majors and local ecosystems. TSMC’s Nanjing fab delivered 28 nm services aimed at Chinese handset and IoT customers while keeping its most advanced 3 nm technology in Taiwan. Memory entrant YMTC shipped high-layer 3D NAND, and DRAM newcomer Changxin Memory pushed DDR5 into consumer modules, narrowing the capability gap with international leaders. Tool suppliers from Japan and Europe continued to sell deposition and etch gear that sits outside current embargo scopes, preserving hybrid value chains.[4]TSMC, “TSMC Fabs,” tsmc.com 

Competitive dynamics intensified after the 2024 US export-control update, which spurred indigenous EDA efforts and prompted foundries to adopt advanced packaging to offset lithography limits. Turnkey chiplet services and wafer-level system-in-package offerings emerged as differentiators. Automotive and industrial sectors offered white-space potential for local SiC and GaN firms that faced fewer entrenched foreign incumbents. The divergent strategies created a market where mature-node competition is crowded, yet cutting-edge niches remain high-stakes and capital-intensive. 

China Semiconductor Device Industry Leaders

  1. Semiconductor Manufacturing International Corp (SMIC)

  2. Taiwan Semiconductor Manufacturing Co (TSMC)

  3. Hua Hong Group

  4. Samsung Electronics Co Ltd

  5. Yangtze Memory Technologies Co (YMTC)

  6. *Disclaimer: Major Players sorted in no particular order
China Semiconductor Device Market Concentration
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Recent Industry Developments

  • March 2025: SMIC reported 2024 revenue of USD 8 billion, up 27%, despite profit compression linked to sanctions.
  • March 2025: Huawei and SMIC disclosed a domestic EUV prototype using laser-induced plasma, targeting trial runs in Q3 2025.
  • February 2025: ROHM introduced 650 V GaN HEMTs in TOLL packages, outsourcing assembly to Weihai-based ATX Semiconductor.
  • February 2025: China Semiconductor Industry Association projected domestic equipment self-sufficiency to reach 50% by 2025.

Table of Contents for China Semiconductor Device Industry Report

1. INTRODUCTION

  • 1.1 Study Assumptions and Market Definition
  • 1.2 Scope of the Study

2. RESEARCH METHODOLOGY

3. EXECUTIVE SUMMARY

4. MARKET LANDSCAPE

  • 4.1 Market Overview
  • 4.2 Market Drivers
    • 4.2.1 Accelerated “Made-in-China 2025” IC Capacity Expansion Programs
    • 4.2.2 AI-centric Edge-Computing Demand from Tier-1 Chinese Cloud Providers
    • 4.2.3 Automotive‐grade SiC/GaN Adoption in NEV Powertrains
    • 4.2.4 National 5G Base-station Build-out Driving RF-Front-End IC Uptake
    • 4.2.5 Industrial Upgrade to “Industry 4.0” Smart-Factories
  • 4.3 Market Restraints
    • 4.3.1 US Export-control Entity-List Restrictions on EUV and EDA Tools
    • 4.3.2 Talent Drain to Overseas Design Houses
    • 4.3.3 Electricity-Intensive Fabs Facing Provincial Carbon-Quota Caps
    • 4.3.4 Persistent Price Volatility of 300 mm Prime Wafers
  • 4.4 Value Chain Analysis
  • 4.5 Regulatory Outlook
  • 4.6 Technological Trends
  • 4.7 Porter’s Five Forces
    • 4.7.1 Threat of New Entrants
    • 4.7.2 Bargaining Power of Buyers
    • 4.7.3 Bargaining Power of Suppliers
    • 4.7.4 Threat of Substitutes
    • 4.7.5 Intensity of Rivalry
  • 4.8 Impact Assessment of Macroeconomic Factors
  • 4.9 Semiconductor Foundry Landscape
    • 4.9.1 Foundry Revenue and Share by Players
    • 4.9.2 IDM vs Fabless Sales
    • 4.9.3 Installed Wafer Capacity (by Fab Location)
    • 4.9.4 Top-5 Fabs Capacity by Node

5. MARKET SIZE AND GROWTH FORECASTS (VALUE)

  • 5.1 By Device Type
    • 5.1.1 Discrete Semiconductors
    • 5.1.2 Optoelectronics
    • 5.1.3 Sensors
    • 5.1.4 Integrated Circuits
    • 5.1.4.1 Analog
    • 5.1.4.2 Logic
    • 5.1.4.3 Memory
    • 5.1.4.4 Micro
    • 5.1.4.4.1 Microprocessors (MPU)
    • 5.1.4.4.2 Microcontrollers (MCU)
    • 5.1.4.4.3 Digital Signal Processors
  • 5.2 By Fabrication Node
    • 5.2.1 ≥65 nm
    • 5.2.2 45–28 nm
    • 5.2.3 22–16 nm
    • 5.2.4 14–10 nm
    • 5.2.5 7–5 nm
    • 5.2.6 <3 nm
  • 5.3 By Wafer Size
    • 5.3.1 200 mm
    • 5.3.2 300 mm
    • 5.3.3 >300 mm (450 mm and FPD)
  • 5.4 By Semiconductor Material
    • 5.4.1 Silicon
    • 5.4.2 Silicon-Carbide (SiC)
    • 5.4.3 Gallium-Nitride (GaN)
    • 5.4.4 Others (SiGe, GaAs, InP)
  • 5.5 By End-Use Industry
    • 5.5.1 Automotive
    • 5.5.2 Communication (Wired and Wireless)
    • 5.5.3 Consumer Electronics
    • 5.5.4 Industrial Automation and Energy
    • 5.5.5 Computing / Data Center
    • 5.5.6 Aerospace and Defense
    • 5.5.7 Healthcare and Wearables
    • 5.5.8 Other End-Use Industries

6. COMPETITIVE LANDSCAPE

  • 6.1 Market Concentration
  • 6.2 Strategic Moves
  • 6.3 Market Share Analysis
  • 6.4 Company Profiles (includes Global level Overview, Market level overview, Core Segments, Financials as available, Strategic Information, Market Rank/Share for key companies, Products and Services, and Recent Developments)
    • 6.4.1 Semiconductor Manufacturing International Corp (SMIC)
    • 6.4.2 Taiwan Semiconductor Manufacturing Co (TSMC)
    • 6.4.3 Hua Hong Group
    • 6.4.4 Intel Corp
    • 6.4.5 Samsung Electronics Co Ltd
    • 6.4.6 SK Hynix Inc
    • 6.4.7 Micron Technology Inc
    • 6.4.8 Yangtze Memory Technologies Co (YMTC)
    • 6.4.9 JCET Group Co Ltd
    • 6.4.10 Advanced Micro Devices Inc
    • 6.4.11 Qualcomm Inc
    • 6.4.12 Broadcom Inc
    • 6.4.13 Nvidia Corp
    • 6.4.14 NXP Semiconductors NV
    • 6.4.15 Infineon Technologies AG
    • 6.4.16 STMicroelectronics NV
    • 6.4.17 Texas Instruments Inc
    • 6.4.18 Will Semiconductor Co Ltd
    • 6.4.19 Goodix Technology
    • 6.4.20 ASE Technology Holding Co
    • 6.4.21 Renesas Electronics Corp
    • 6.4.22 Rohm Co Ltd

7. MARKET OPPORTUNITIES AND FUTURE OUTLOOK

  • 7.1 White-space and Unmet-Need Assessment
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China Semiconductor Device Market Report Scope

A semiconductor device is an electronic component that relies on the electronic properties of semiconductor material for its function. Its conductivity lies between conductors and insulators. Semiconductor devices have replaced vacuum tubes in most applications. They conduct electric current in the solid state rather than as free electrons across a vacuum or as free electrons and ions through an ionized gas.

The China semiconductor device market is segmented by device type (discrete semiconductors, optoelectronics, sensors, and integrated circuits [analog, logic, memory, and micro [microprocessors, microcontrollers, and digital signal processors]]) and by end-user vertical (automotive, communication [wired and wireless], consumer electronics, industrial, computing/data storage, and other end-user verticals). The report offers market forecasts and size in value (USD) for all the above segments.

By Device Type Discrete Semiconductors
Optoelectronics
Sensors
Integrated Circuits Analog
Logic
Memory
Micro Microprocessors (MPU)
Microcontrollers (MCU)
Digital Signal Processors
By Fabrication Node ≥65 nm
45–28 nm
22–16 nm
14–10 nm
7–5 nm
<3 nm
By Wafer Size 200 mm
300 mm
>300 mm (450 mm and FPD)
By Semiconductor Material Silicon
Silicon-Carbide (SiC)
Gallium-Nitride (GaN)
Others (SiGe, GaAs, InP)
By End-Use Industry Automotive
Communication (Wired and Wireless)
Consumer Electronics
Industrial Automation and Energy
Computing / Data Center
Aerospace and Defense
Healthcare and Wearables
Other End-Use Industries
By Device Type
Discrete Semiconductors
Optoelectronics
Sensors
Integrated Circuits Analog
Logic
Memory
Micro Microprocessors (MPU)
Microcontrollers (MCU)
Digital Signal Processors
By Fabrication Node
≥65 nm
45–28 nm
22–16 nm
14–10 nm
7–5 nm
<3 nm
By Wafer Size
200 mm
300 mm
>300 mm (450 mm and FPD)
By Semiconductor Material
Silicon
Silicon-Carbide (SiC)
Gallium-Nitride (GaN)
Others (SiGe, GaAs, InP)
By End-Use Industry
Automotive
Communication (Wired and Wireless)
Consumer Electronics
Industrial Automation and Energy
Computing / Data Center
Aerospace and Defense
Healthcare and Wearables
Other End-Use Industries
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Key Questions Answered in the Report

What is the current value of the China semiconductor device market?

The market generated USD 217.55 billion in 2025 and is on track for USD 310.78 billion by 2030.

Which device segment leads the market today?

Integrated circuits dominated with 69.5% revenue share in 2024 and are forecast for the fastest growth to 2030.

Why are wide-bandgap materials growing so quickly?

Silicon-carbide and gallium-nitride devices cut power losses and handle higher temperatures, making them ideal for electric-vehicle inverters and 5G base stations, which are expanding rapidly across China.

How have export controls affected domestic chipmakers?

Controls restricted access to EUV scanners and top-tier EDA tools, slowing sub-7 nm progress, yet firms shifted capital to mature-node expansions and advanced packaging to maintain growth.

What growth rate is expected for automotive semiconductors?

Semiconductor demand in China’s automotive sector is projected to rise at a 12.2% CAGR from 2025-2030 as electric-vehicle production scales nationally.

China Semiconductor Device Market Report Snapshots

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