High Bandwidth Memory Market Size, Growth, Forecast & Industry Share 2030

Name: High Bandwidth Memory Market Size, Growth, Forecast & Industry Share 2030
Creator: Mordor Intelligence
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High Bandwidth Memory Market Size and Share

Market Overview

Study Period	2019 - 2030
Market Size (2025)	USD 3.17 Billion
Market Size (2030)	USD 10.16 Billion
Growth Rate (2025 - 2030)	26.24% CAGR
Fastest Growing Market	Asia Pacific
Largest Market	Asia Pacific
Market Concentration	High
Major Players *Disclaimer: Major Players sorted in no particular order Image © Mordor Intelligence. Reuse requires attribution under CC BY 4.0.

High Bandwidth Memory Market (2025 - 2030) — Image © Mordor Intelligence. Reuse requires attribution under CC BY 4.0.

High Bandwidth Memory Market Analysis by Mordor Intelligence

The high bandwidth memory market size stood at USD 3.17 billion in 2025 and is forecast to climb to USD 10.16 billion by 2030, reflecting a 26.24% CAGR. Sustained demand for AI-optimized servers, wider DDR5 adoption, and aggressive hyperscaler spending continued to accelerate capacity expansions across the semiconductor value chain in 2025. Over the past year, suppliers concentrated on TSV yield improvement, while packaging partners invested in new CoWoS lines to ease substrate shortages. Automakers deepened engagements with memory vendors to secure ISO 26262-qualified HBM for Level 3 and Level 4 autonomous platforms. Asia-Pacific’s fabrication ecosystem retained production leadership after Korean manufacturers committed multibillion-dollar outlays aimed at next-generation HBM4E ramps.

Key Report Takeaways

By application, servers led with 68.5% revenue share in 2024, while automotive and transportation are projected to expand at a 35.6% CAGR through 2030.
By technology, HBM3 captured 46.3% of 2024 revenue; HBM3E is advancing at a 42.3% CAGR to 2030.
By memory capacity per stack, 16 GB commanded 38.9% of the high bandwidth memory market size in 2024; 32 GB and above is forecast to register a 37.8% CAGR.
By processor interface, GPUs accounted for 64.4% market share in 2024, whereas AI accelerators/ASICs show a 33.2% projected CAGR.
By geography, Asia-Pacific held 41.2% revenue share in 2024 and is predicted to grow at a 29.4% CAGR through 2030.

Global High Bandwidth Memory Market Trends and Insights

Drivers Impact Analysis

Driver	(~) % Impact on CAGR Forecast	Geographic Relevance	Impact Timeline
AI-server proliferation and GPU attach rates	+8.5%	Global, concentrated in North America and Asia-Pacific	Medium term (2-4 years)
Data-center shift to DDR5 and 2.5-D packaging	+6.2%	Global, led by hyperscaler regions	Medium term (2-4 years)
Edge-AI inference in automotive ADAS	+4.8%	Europe, North America, and China are automotive hubs	Long term (≥ 4 years)
Hyperscaler preference for silicon interposer stacks	+3.7%	North America, Asia-Pacific data center regions	Short term (≤ 2 years)
Localized memory production subsidies	+2.1%	US, South Korea, Japan	Long term (≥ 4 years)
Photonics-ready HBM road-maps	+1.1%	Global, early adoption in research centers	Long term (≥ 4 years)

Source: Mordor Intelligence

Understand The Key Trends Shaping This Market

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AI-Server Proliferation and GPU Attach Rates

Rapid growth in large-scale language models drove a seven-fold rise in HBM per GPU requirements compared with traditional HPC devices during 2024. NVIDIA’s H100 combined 80 GB of HBM3, delivering 3.35 TB/s, while the H200 was sampled in early 2025 with 141 GB of HBM3E at 4.8 TB/s.^{[1]NVIDIA, “GPU Memory Essentials for AI Performance,” nvidia.com} Order backlogs locked in the majority of supplier capacity through 2026, forcing data-center operators to pre-purchase inventory and co-invest in packaging lines.

Data-Center Shift to DDR5 and 2.5-D Packaging

Hyperscalers moved workloads from DDR4 to DDR5 to obtain 50% better performance per watt, simultaneously adopting 2.5-D integration that links AI accelerators to stacked memory on silicon interposers. Dependence on a single packaging platform heightened supply-chain risk when substrate shortages delayed GPU launches throughout 2024.

Edge-AI Inference in Automotive ADAS

Autonomous vehicles that reach Level 4 capability process sensor streams above 1 TB/s, pushing the automotive tier toward HBM4 samples qualified under ISO 26262. Memory vendors introduced safety-oriented designs that include built-in ECC and enhanced thermal monitoring to meet functional-safety mandates.

Hyperscaler Preference for Silicon Interposer Stacks

Custom AI chips from AWS, Google, and Microsoft integrated multiple HBM stacks through TSMC’s CoWoS, achieving interconnect densities above 10,000 connections/mm². Vendors reacted to capacity shortages by funding dedicated interposer lines and co-developing chiplet architectures that shrink interposer footprints.

Restraints Impact Analysis

Restraint	(~) % Impact on CAGR Forecast	Geographic Relevance	Impact Timeline
TSV yield losses above 12-layer stacks	-4.2%	Global, concentrated in advanced fabs	Medium term (2-4 years)
Limited CoWoS/SoIC advanced-packaging capacity	-3.8%	Asia-Pacific, affecting global supply	Short term (≤ 2 years)
Thermal throttling in >1 TB/s bandwidth devices	-2.1%	Global, particularly in data centers	Medium term (2-4 years)
Geo-political export controls on AI accelerators	-1.9%	China, with spillover effects globally	Long term (≥ 4 years)

Source: Mordor Intelligence

TSV Yield Losses Above 12-Layer Stacks

Yield fell below 70% on 16-high HBM stacks because thermal cycling induced copper-migration failures within TSVs. Manufacturers pursued thermal through-silicon via designs and novel dielectric materials to stabilize reliability, but commercialization remains two years away.

Limited CoWoS/SoIC Advanced-Packaging Capacity

CoWoS lines averaged 95% utilization in 2024; substrate makers struggled to supply T-Glass at sufficient volumes, forcing allocation to top customers and delaying emerging AI accelerator programs. Alternative SoIC flows from Samsung and EMIB from Intel entered early ramp, yet could not offset near-term shortages.

Segment Analysis

By Application: Servers Drive Infrastructure Transformation

The server category led the high bandwidth memory market with a 68.5% revenue share in 2024, reflecting hyperscale operators’ pivot to AI servers that each integrate eight to twelve HBM stacks. Demand accelerated after cloud providers launched foundation-model services that rely on per-GPU bandwidth above 3 TB/s. Energy efficiency targets in 2025 favored stacked DRAM because it delivered superior performance-per-watt over discrete solutions, enabling data-center operators to stay within power envelopes. An enterprise refresh cycle began as companies replaced DDR4-based nodes with HBM-enabled accelerators, extending purchasing commitments into 2027.

The automotive and transportation segment, while smaller today, recorded the fastest growth with a projected 35.6% CAGR through 2030. Chipmakers collaborated with Tier 1 suppliers to embed functional-safety features that meet ASIL D requirements. Level 3 production programs in Europe and North America entered limited rollout in late 2024, each vehicle using memory bandwidth previously reserved for data-center inference clusters. As over-the-air update strategies matured, vehicle manufacturers began treating cars as edge servers, further sustaining HBM attach rates.

High Bandwidth Memory Market: Market Share by Application — Image © Mordor Intelligence. Reuse requires attribution under CC BY 4.0.

By Technology: HBM3 Leadership Faces HBM3E Disruption

HBM3 accounted for 46.3% revenue in 2024 after widespread adoption in AI training GPUs. Sampling of HBM3E started in Q1 2024, and first-wave production ran at pin speeds above 9.2 Gb/s. Performance gains reached 1.2 TB/s per stack, reducing the number of stacks needed for the target bandwidth and lowering package thermal density.

HBM3E’s 42.3% forecast CAGR is underpinned by Micron’s 36 GB, 12-high product that entered volume production in mid-2025, targeting accelerators with model sizes up to 520 billion parameters. Looking forward, the HBM4 standard published in April 2025 doubles channels per stack and raises aggregate throughput to 2 TB/s, setting the stage for multi-petaflop AI processors.^{[2]JEDEC Solid State Technology Association, “JESD270-4 HBM4 Standard,” jedec.org}

By Memory Capacity: 16 GB Mainstream Yields to 32 GB Expansion

The 16 GB tier represented 38.9% of the high bandwidth memory market share during 2024, balancing yield and capacity for mainstream LLM training nodes. Suppliers relied on mature 8-high stack configurations that shipped at high yields, supporting aggressive cost targets.

Demand for larger models spurred a swift pivot toward 32 GB and 36 GB offerings, driving a 37.8% CAGR expectation for 32 GB-plus devices to 2030. Micron’s 36 GB, 12-high HBM3E widened capacity without exceeding 12-layer TSV risk thresholds. Upcoming 24-high HBM4E roadmaps target 64 GB per stack, although vendors continued to refine embedded cooling to offset thermal density.

High Bandwidth Memory Market: Market Share by Memory Capacity — Image © Mordor Intelligence. Reuse requires attribution under CC BY 4.0.

By Processor Interface: GPU Dominance Challenged by AI Accelerators

GPUs consumed 64.4% of 2024 shipments as NVIDIA’s H100 and H200 lines dominated AI training clusters. Peak utilization rates forced cloud operators to reserve future wafer outputs well into 2026.

Custom AI accelerators showed a 33.2% projected CAGR to 2030 as hyperscalers shifted toward internally designed chips optimized for proprietary workloads. These ASICs often integrate high bandwidth memory directly on-package, eliminating off-chip latency. FPGA-based cards retained a niche position in network function virtualization and low-latency trading, leveraging HBM to sustain throughput without sacrificing reconfigurability.

Geography Analysis

Asia-Pacific accounted for 41.2% of 2024 revenue, anchored by South Korea, where SK Hynix and Samsung controlled more than 80% of production lines. Government incentives announced in 2024 supported an expanded fabrication cluster scheduled to open in 2027. Taiwan’s TSMC maintained a packaging monopoly for leading-edge CoWoS, tying memory availability to local substrate supply and creating a regional concentration risk.

North America’s share grew as Micron secured USD 6.1 billion in CHIPS Act funding to build advanced DRAM fabs in New York and Idaho, with pilot HBM runs expected in early 2026.^{[3]Micron Technology, “The Chips Act Grant Enables Expansion,” micron.com} Hyperscaler capital expenditures continued to drive local demand, although most wafers were still processed in Asia before final module assembly in the United States.

Europe entered the market through automotive demand; German OEMs qualified HBM for Level 3 driver-assist systems shipping in late 2024. The EU’s semiconductor strategy remained R&D-centric, favoring photonic interconnect and neuromorphic research that could unlock future high bandwidth memory market expansion. Middle East and Africa stayed in an early adoption phase, yet sovereign AI datacenter projects initiated in 2025 suggested a coming uptick in regional demand.

High Bandwidth Memory Market CAGR (%), Growth Rate by Region — Image © Mordor Intelligence. Reuse requires attribution under CC BY 4.0.

Competitive Landscape

The high bandwidth memory market displayed oligopolistic characteristics because SK Hynix, Samsung, and Micron collectively supplied more than 95% of global output. SK Hynix held leadership thanks to early TSV investment and sole-source contracts with NVIDIA for HBM3E. Samsung narrowed the gap after resolving 2024 yield issues and launching a dual-site HBM4 line at Pyeongtaek in mid-2025. Micron accelerated share gains by pairing its 36 GB HBM3E with AMD’s MI350 GPU, providing an attractive alternative for open AI hardware ecosystems.

Competition shifted from core cell technology toward advanced packaging alliances. SK Hynix and TSMC announced a co-production model that couples N3 logic with HBM4 stacks under a single procurement cycle, locking in customers through 2028.^{[4]SK Hynix, “SK Hynix Partners With TSMC to Strengthen HBM Leadership,” skhynix.com} Suppliers also targeted differentiated niches such as automotive-qualified HBM variants that incorporate extended temperature ranges and real-time diagnostics. Chinese entrants continued to develop domestic HBM2E and HBM3 capabilities; however, export controls limited equipment access, keeping their offerings one to two generations behind.

The push toward application-specific memory catalyzed a service-oriented engagement model where vendors tune speed bins, channel counts, and ECC schemes to individual workloads. This customization strategy built switching costs that favored incumbent suppliers and reinforced market concentration through 2030.

High Bandwidth Memory Industry Leaders

Micron Technology, Inc.
Samsung Electronics Co. Ltd.
SK Hynix Inc.
Intel Corporation
Fujitsu Limited
*Disclaimer: Major Players sorted in no particular order

High Bandwidth Memory (HBM) Market Concentration — Image © Mordor Intelligence. Reuse requires attribution under CC BY 4.0.

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Recent Industry Developments

January 2025: Micron integrated its HBM3E 36 GB memory into AMD’s Instinct MI350 GPUs, delivering up to 8 TB/s bandwidth.
December 2024: JEDEC released the JESD270-4 HBM4 standard, enabling 2 TB/s throughput and 64 GB configurations.
November 2025: SK Hynix and TSMC expanded joint HBM4 development to speed volume availability for 3 nm AI accelerators.
July 2025: SK Hynix confirmed construction of a USD 6.8 billion memory fab in Yongin targeting HBM production.

Table of Contents for High Bandwidth Memory Industry Report

1. INTRODUCTION

1.1 Study Assumptions and Market Definition
1.2 Scope of the Study

2. RESEARCH METHODOLOGY

3. EXECUTIVE SUMMARY

4. MARKET LANDSCAPE

4.1 Market Overview
4.2 Market Drivers
- 4.2.1 AI-server proliferation and GPU attach rates
- 4.2.2 Data-center shift to DDR5 and 2.5-D packaging
- 4.2.3 Edge-AI inference in automotive ADAS
- 4.2.4 Hyperscaler preference for silicon interposer stacks
- 4.2.5 Localized memory production subsidies (KR, US, JP)
- 4.2.6 Photonics-ready HBM road-maps (HBM-P)
4.3 Market Restraints
- 4.3.1 TSV yield losses above 12-layer stacks
- 4.3.2 Limited CoWoS/SoIC advanced-packaging capacity
- 4.3.3 Thermal throttling in >1 TB/s bandwidth devices
- 4.3.4 Geo-political export controls on AI accelerators
4.4 Value Chain Analysis
4.5 Regulatory Landscape
4.6 Technological Outlook
4.7 Porter’s Five Forces Analysis
- 4.7.1 Bargaining Power of Suppliers
- 4.7.2 Bargaining Power of Buyers
- 4.7.3 Threat of New Entrants
- 4.7.4 Threat of Substitutes
- 4.7.5 Intensity of Competitive Rivalry
4.8 DRAM Market Analysis
- 4.8.1 DRAM Revenue and Demand Forecast
- 4.8.2 DRAM Revenue by Geography
- 4.8.3 Current Pricing of DDR5 Products
- 4.8.4 List of DDR5 Product Manufacturers
4.9 Impact of Macroeconomic Factors

5. MARKET SIZE AND GROWTH FORECASTS (VALUE)

5.1 By Application
- 5.1.1 Servers
- 5.1.2 Networking
- 5.1.3 High-Performance Computing
- 5.1.4 Consumer Electronics
- 5.1.5 Automotive and Transportation
5.2 By Technology
- 5.2.1 HBM2
- 5.2.2 HBM2E
- 5.2.3 HBM3
- 5.2.4 HBM3E
- 5.2.5 HBM4
5.3 By Memory Capacity per Stack
- 5.3.1 4 GB
- 5.3.2 8 GB
- 5.3.3 16 GB
- 5.3.4 24 GB
- 5.3.5 32 GB and Above
5.4 By Processor Interface
- 5.4.1 GPU
- 5.4.2 CPU
- 5.4.3 AI Accelerator / ASIC
- 5.4.4 FPGA
- 5.4.5 Others
5.5 By Geography
- 5.5.1 North America
- 5.5.1.1 United States
- 5.5.1.2 Canada
- 5.5.1.3 Mexico
- 5.5.2 South America
- 5.5.2.1 Brazil
- 5.5.2.2 Rest of South America
- 5.5.3 Europe
- 5.5.3.1 Germany
- 5.5.3.2 France
- 5.5.3.3 United Kingdom
- 5.5.3.4 Rest of Europe
- 5.5.4 Asia-Pacific
- 5.5.4.1 China
- 5.5.4.2 Japan
- 5.5.4.3 India
- 5.5.4.4 South Korea
- 5.5.4.5 Rest of Asia-Pacific
- 5.5.5 Middle East and Africa
- 5.5.5.1 Middle East
- 5.5.5.1.1 Saudi Arabia
- 5.5.5.1.2 United Arab Emirates
- 5.5.5.1.3 Turkey
- 5.5.5.1.4 Rest of Middle East
- 5.5.5.2 Africa
- 5.5.5.2.1 South Africa
- 5.5.5.2.2 Rest of Africa

6. COMPETITIVE LANDSCAPE

6.1 Market Concentration
6.2 Strategic Moves
6.3 Market Share Analysis
6.4 Company Profiles (includes Global-level Overview, Market-level Overview, Core Segments, Financials, Strategic Information, Market Rank/Share, Products and Services, Recent Developments)
- 6.4.1 Samsung Electronics Co., Ltd.
- 6.4.2 SK hynix Inc.
- 6.4.3 Micron Technology, Inc.
- 6.4.4 Intel Corporation
- 6.4.5 Advanced Micro Devices, Inc.
- 6.4.6 Nvidia Corporation
- 6.4.7 Taiwan Semiconductor Manufacturing Company Limited
- 6.4.8 ASE Technology Holding Co., Ltd.
- 6.4.9 Amkor Technology, Inc.
- 6.4.10 Powertech Technology Inc.
- 6.4.11 United Microelectronics Corporation
- 6.4.12 GlobalFoundries Inc.
- 6.4.13 Applied Materials Inc.
- 6.4.14 Marvell Technology, Inc.
- 6.4.15 Rambus Inc.
- 6.4.16 Cadence Design Systems, Inc.
- 6.4.17 Synopsys, Inc.
- 6.4.18 Siliconware Precision Industries Co., Ltd.
- 6.4.19 JCET Group Co., Ltd.
- 6.4.20 Chipbond Technology Corporation
- 6.4.21 Cadence Design Systems Inc.
- 6.4.22 Broadcom Inc.
- 6.4.23 Celestial AI
- 6.4.24 ASE-SPIL (Silicon Products)
- 6.4.25 Graphcore Limited

7. MARKET OPPORTUNITIES AND FUTURE OUTLOOK

7.1 White-space and Unmet-need Assessment

*List of vendors is dynamic and will be updated based on customized study scope

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Global High Bandwidth Memory Market Report Scope

High bandwidth memory (HBM) is the high-speed computer memory interface for 3D-stacked synchronous dynamic random-access memory (SDRAM). It works with high-performance network hardware, high-performance data center AI ASICs, FPGAs, and supercomputers.

The high bandwidth memory (HBM) market is segmented by application (servers, networking, consumer, and automotive and other applications) and geography (North America [United States and Canada], Europe [Germany, France, United Kingdom, and Rest of Europe], Asia-Pacific [India, China, Japan, and Rest of Asia-Pacific], and Rest of the World).

The market sizes and forecasts are provided in terms of value (USD) for all the above segments.

By Application	Servers
	Networking
	High-Performance Computing
	Consumer Electronics
	Automotive and Transportation
By Technology	HBM2
	HBM2E
	HBM3
	HBM3E
	HBM4
By Memory Capacity per Stack	4 GB
	8 GB
	16 GB
	24 GB
	32 GB and Above
By Processor Interface	GPU
	CPU
	AI Accelerator / ASIC
	FPGA
	Others

By Geography	North America	United States
		Canada
		Mexico

	South America	Brazil
		Rest of South America

	Europe	Germany
		France
		United Kingdom
		Rest of Europe

	Asia-Pacific	China
		Japan
		India
		South Korea
		Rest of Asia-Pacific

	Middle East and Africa	Middle East	Saudi Arabia
			United Arab Emirates
			Turkey
			Rest of Middle East

		Africa	South Africa
			Rest of Africa

By Application

Servers

Networking

High-Performance Computing

Consumer Electronics

Automotive and Transportation

By Technology

HBM2

HBM2E

HBM3

HBM3E

HBM4

By Memory Capacity per Stack

4 GB

8 GB

16 GB

24 GB

32 GB and Above

By Processor Interface

GPU

CPU

AI Accelerator / ASIC

FPGA

Others

By Geography

North America	United States
	Canada
	Mexico
South America	Brazil
	Rest of South America
Europe	Germany
	France
	United Kingdom
	Rest of Europe
Asia-Pacific	China
	Japan
	India
	South Korea
	Rest of Asia-Pacific

Middle East and Africa	Middle East	Saudi Arabia
		United Arab Emirates
		Turkey
		Rest of Middle East

	Africa	South Africa
		Rest of Africa