Market Size of 3D TSV Devices Industry
| Study Period | 2019 - 2029 |
| Base Year For Estimation | 2023 |
| CAGR | 6.20 % |
| Fastest Growing Market | Asia Pacific |
| Largest Market | North America |
| Market Concentration | Low |
Major Players
*Disclaimer: Major Players sorted in no particular order |
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3D TSV Devices Market Analysis
The 3D TSV Devices Market registered a CAGR of 6.2% over the forecast period 2021 - 2026. For saving space in the package, especially for next-generation products, and to meet the demand from edge computing applications, which require shorter reaction time and different structures semiconductor manufacturers are increasingly using silicon via (TSV) techniques for chip stacking.
- Rising demand for miniaturization of electronic devices drives the growth of the 3D TSV market. These products may be achieved by hetero system integration, which may give more reliable advanced packaging. With extremely small MEMS sensors and 3D packaged electronics, one can place sensors virtually anywhere and could monitor equipment in harsh environments, in real-time, to help increase reliability and uptime.
- 3D TSV in dynamic random-access memory (DRAM) that stores each bit of data in a separate tiny capacitor within an integrated circuit propels the growth of the 3D TSV market. Micron's 3D DRAM with re-architected DRAM achieves significant improvements in power and timing, which help in developing advanced thermal modeling.
- The recent COVID-19 outbreak is expected to create significant imbalances in the supply chain of the market studied, as Asia-Pacific, particularly China, is one of the major influencers of the market studied. Also, many of the local governments in the Asia-Pacific have invested in the semiconductor industry in a long run program, hence, expected to regain market growth. For instance, the Chinese government raised around USD 23 to 30 billion funds, to pay for the second phase of its National IC Investment Fund 2030.
- However, thermal issues caused due to a high level of incorporation is a challenging factor for the growth of the 3D TSV market. Since silicon via (TSV) provides the key connection in 3D IC integration, the difference of coefficient of thermal expansion (CTE) between silicon and copper is more than 10 ppm/K, which provides thermal stress when a thermal load is applied.
