Silicon Carbide Power Semiconductor Market Share

Statistics for the 2023 & 2024 Silicon Carbide Power Semiconductor market share, created by Mordor Intelligence™ Industry Reports. Silicon Carbide Power Semiconductor share report includes a market forecast to 2029 and historical overview. Get a sample of this industry share analysis as a free report PDF download.

Market Share of Silicon Carbide Power Semiconductor Industry

The silicon carbide power semiconductor market is highly competitive. It consists of several significant players, including Infineon Technologies AG, Texas Instruments Inc., ST Microelectronics NV, Hitachi Power Semiconductor Device Ltd, NXP Semiconductor, Fuji Electric Co. Ltd, Semikron International GmbH, Cree Inc., ON Semiconductor Corporation, Mitsubishi Electric Corporation, and others. These companies are introducing new products, partnerships, and acquisitions, to increase their market share.

  • June 2021 - Hitachi, a Japanese electronics company, announced plans to extend its existing presence in Hillsboro by building a big semiconductor research lab to cooperate with manufacturing clients in the United States to create new technologies.
  • April 2021 - Infineon Technologies AG launched a new EasyPACK 2B module to its 1200 V product line. The module offers a three-level Active NPC (ANPC) topology, including CoolSiC MOSFETs, TRENCHSTOP IGBT7 devices, NTC temperature sensor, and PressFIT contact technology pins.

Silicon Carbide Power Semiconductor Market Leaders

  1. Infineon technologies AG

  2. Texas instruments Inc.

  3. STMicroelectronics NV

  4. NXP semiconductor

  5. ON Semiconductor Corporation

*Disclaimer: Major Players sorted in no particular order

Infineon Technologies AG, Texas Instruments Inc., ST Microelectronics NV, NXP semiconductor, ON Semiconductor Corporation.

Silicon Carbide Power Semiconductor Market Size & Share Analysis - Growth Trends & Forecasts (2024 - 2029)