Japan Power Transistor Market Size

Japan Power Transistor Market Analysis

The Japanese power transistor market was valued at USD 2,986.3 million during the current year and is anticipated to reach USD 3670.9 million by the end of the forecast period, registering a CAGR of 3.50% during the forecast period.

• Owing to the pandemic, the automotive industry witnessed a severe slump in demand, leading to negative growth in 2020 and 2021. At the onset of the pandemic, many automakers set aggressive cost curtailment targets. They announced cuts in capital expenditure to remain profitable amid low output and uncertain demand outlook.
• For instance, Toyota announced plans to cut global production in September 2021 by 40% compared to earlier plans as COVID-19 constricted the supply of semiconductors. The company announced suspensions in operations at multiple Japanese plants in that month due to a parts shortage resulting from the spread of COVID-19 in Southeast Asia.
• In Japan, the automotive industry accounts for a significant share of the total demand for semiconductors in the country, having emerged as the 5th largest automobile market in 2022, as per the German Association of the Automotive Industry or VDA. The automotive industry's migration from fossil fuel vehicles to hybrid and electric vehicles drives the demand for power devices.
• As per the collaboration, an IGBT line would be installed at USJC's wafer fab, which would be the first in Japan to produce IGBTs on 300mm wafers. DENSO would contribute its system-oriented IGBT device and process technologies.
• At the same time, USJC will provide its 300mm wafer manufacturing capabilities to bring the 300 mm IGBT process into mass production, scheduled to start in the first half of 2023. IGBTs are perceived as core devices in power cards, serving as efficient power switches in inverters to convert DC and AC currents to drive and control electric vehicle motors.
• Further, in February 2022, Toshiba Electronic Devices & Storage Corporation announced that it would construct a new 300-millimeter wafer fabrication facility for power semiconductors, including transistors at Kaga Toshiba Electronics Corporation in Ishikawa Prefecture, its main discrete semiconductor production base. Construction is expected to occur in two phases, with the production start of Phase 1 scheduled for 2024. When Phase 1 reaches total capacity, Toshiba's power semiconductor production capacity will be 2.5 times that of fiscal 2021.
• Also, in January 2022, Toshiba Electronic Devices & Storage Corporation launched two silicon carbide (SiC) MOSFET dual modules: 'MG600Q2YMS3', with a voltage rating of 1200V and drain current rating of 600A and 'MG400V2YMS3', with a voltage rating of 1700V and drain current rating of 400A. The first Toshiba products with these voltage ratings joined the previously released MG800FXF2YMS3 in a 1200V, 1700V, and 3300V devices lineup.