Americas Power Transistor Market Size

Americas Power Transistor Market Analysis

The Americas power transistor market was valued at USD 2,198.9 million during the current year and is anticipated to reach USD 2,880.1 million by the end of the forecast period, registering a CAGR of 4.60% during the forecast period.

• COVID-19 had a significant impact on the market in the initial phase. The non-availability of the workforce affected the power transistor production capacity and market growth. Due to the enforced lockdown, automobile manufacturers worldwide cut orders as vehicle sales declined. However, in 2021, many restrictions were normalized in the region, and the demand for power transistors returned to normal. Over the coming years, the market is expected to renewed growth, with the rising trends of digitalization brought about by the pandemic.
• Power transistors, such as metal-oxide-semiconductor field-effect transistors (MOSFETs) and insulated-gate bipolar transistors (IGBTs), help in the rapid dissipation of heat, prevent overheating and minimize carbon dioxide emission and the cost of electricity. These advantages make them a crucial component of several electronic products. Due to the increasing worldwide population and usage of fossil fuels, there has been a rising demand for power-efficient electronic devices.
• The increased demand for MOSFET over BJT is because it generates significantly less heat loss at high currents than BJT. Similarly, it has higher efficiency than other devices, driving demand for MOSFETs in power electronics. The vendors focus on introducing high-power and high-frequency MOSFET to use across power electronics, power amplifiers, and others.
• For instance, in July 2022, Mitsubishi Electric Corporation launched a 50W high-power, silicon radio-frequency MOSFET module for use in power amplifiers of commercial radios. The silicon RF high-power MOSFET (RA50H7687M1) achieves high total efficiency and unmatched power output for commercial radios well-suited with the 700 MHz frequency band. This is projected to increase the communication range and reduce the power consumption of radios.
• Further, the power loss in conventional power amplifiers creates demand for radio frequency (RF) high-power MOSFET modules that offers built-in input or output impedance-matching circuit and verified output power performance. The key vendors, such as Mitsubishi Electric, plan to expand the frequency range by launching a 900 MHz module equipped with the new MOSFET in the coming year. According to the company, the model with 50 W power output in the 763 MHz to 870 MHz band and total efficiency of 40% is projected to help reduce power consumption and increase radio communication range.
• Moreover, with the acceleration of the electric vehicle (EV) market in the studied regions, many car makers are now embracing 800-V drive systems to increase efficiency, achieve faster charging, and expand the range of such vehicles, all while reducing weight and cost. Wide-bandgap devices, such as SiCMOSFETs, are helping automakers advance state-of-the-art power devices for EV powertrains and other applications where such factors are important.
• For instance, in December 2022, STMicroelectronics launched new silicon-carbide (SiC) high-power modules designed to increase electric vehicles' performance and driving range. The five new SiC-MOSFET-based power modules were chosen by Hyundai to be used in the E-GMP electric-vehicle platform shared by KIA EV6 and several models.
• Further, in September 2022, SemiQ announced the launch of its 2nd Generation Silicon Carbide power switch, a 1200V 40mΩ SiC MOSFET, expanding its portfolio of SiC power devices. SiC MOSFETs bring high efficiency to high-performance applications, including electric vehicles and power supplies, and are specifically designed and tested to operate reliably in extreme environments.